二手 AIXTRON Tricent #9190702 待售
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ID: 9190702
晶圓大小: 12"
優質的: 2008
Atomic layer deposition system, 12"
Frame:
Tricent ALD Process cluster oxide
Gas mixing system
Precurson liquid delivery system
ALD Reactor
Vacuum and cooling systems
(2) Tricent ALD Heat exchangers: 220°C
Automatic wafer transfer system
Tricent ALD double O-ring pump
Options:
Tricent ALD Ozone generator for 2 PMs
Tricent ALD set of precursor tanks for vaporizer for 2 PM's
Automatic wafer transfer system:
Fully automated cassette-to-cassette wafer loading and unloading
Configurations: 25 x 300 mm
(3) FOUP loading ports
Loadlock A: Batch 25 x 300 mm
Loadlock B: Batch 25 x 300 mm
Vacuum handling platform: 4 MESC-type process modules
Wafer handling platform includes:
Front end atmospheric module
Front end atmospheric robot
Vacuum transport chamber and frame
MagnaTran magnetically driven
Fully encapsulated vacuum robot
Transfer arm with high temperature end effector
Wafer alignment module
Tricent ALD O-Ring pump:
PM1/PM2 Tricent ALD Process cluster oxide: (2) Deposition modules
Each PM:
Gas mixing system
Ventilated gas mixing cabinet
Electro-polished 316 SUS tubing
VCR-Connectors all orbital welded
Individual control valves:
Pressure indicator switch
Check valves
Particle filters
Pneumatic valves
Gas line:
Reactive gas line: 03 including Destruct
Purge gas line: Ar
High-Flow / Low-Flow purge configuration
Electronic flow controllers and pneumatic valves for various purge lines
Individual pneumatic valves for reactive gas line
Individual downstream pressure controls with electronic mass flow meters for:
(3) reactive gas line and various purge lines
ALD valve block with high-speed switching
ALD valves for reactive gas and various purge lines
ALD valve block temperature-controlled and adapted to reactor lid
Safety configuration: Normally closed
Precursor liquid delivery system:
(2) Liquid precursor lines
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Liquid flow meters
3-position liquid medium valves for each precursor line
Individual manual separation valves
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Optional: precursor and solvent tanks
(1) Mist preparator wand, 1.8 liter nominal volume
Single-Injector Tri-Jet liquid precursor evaporation systems:
(2) Contact-less cylinder evaporators
Individually controlled temperature range: 40 C - 250 C
High precision injectors for the liquid precursor lines
Joint Pre-heated carrier gas line
Temperature controlled: 40 C - 230 C
Spare provision: He purge line
Joint run-vent-purge stack
Temperature controlled: 40°C - 230°C
Separate precursor box with room temperature bubbler
Ventilated enclosure with Nitrogen purge line
Smoke detector and ventilation flow sensor integrated in Precursor Box
Single room temperature bubbler for high vapor pressure precursors with TMA
Control valve with pressure indicator switch
Particle filter
Downstream pressure control with electronic mass flow meter
Dual 2/2 way valve for carrier line
Single joint run line with ALD valve
ALD reactor:
Reactor cabinet
Hot wall aluminum reactor chamber, max 220°C.
Showerhead with separation between reactive gas and metal-organic precursor flows
Reactor walls, reactor lid, and showerhead assembly temperature controlled by heat exchanger with thermal liquid
Thermal liquid
Aluminum nitride substrate heater
Closed-loop temperature controlled resistive heater
Wafer transfer lift pin mechanism with vertically movable substrate heater assembly.
Wafer transfer MESC port with pneumatic slit valves
Vacuum system:
Pressure sensors and pressure controllers
Designed for process pressure: up to 10 mbar
Heated exhaust line up to outlet flange on the process module
Throttle valve and check valves
Cooling system:
Type: Julabo
Digital flow meters, temperature transmitters, and manual separator valves for each cooling branch.
Tricent ALD Heat exchanger
One per module required for system operation
For operation with thermal liquid (Thermal H 250)
Maximum operating temperature 220°C.
2008 vintage.
AIXTRON Tricent是一種高性能感應耦合等離子體(ICP)反應器,設計用於將III-V、復合半導體、介電和金屬層等多種材料沈積在任何尺寸的基板上。它是一種低壓直流電氣體流源,工作頻率為8-20 mbar,脈沖直接頻率為15kHz,功率傳遞能力高達600 W。Tricent有一個完全封閉的反應室,為所需層在底物上的高效均勻沈積提供了優化的空間。其雙頻射頻發生器和磁場發生器能夠在廣泛的頻率範圍內運行,模擬精確的工藝條件。該系統配有真空密封蓋、熱氣閥和靈活的電氣連接,而基板支架設計用來支撐和固定不同尺寸和形狀的基板。AIXTRON Tricent在層狀沈積過程中效率高,具有較高的沈積速率和整體膜均勻性。其溫度控制的基板支架保證了室內能量的均勻分布,保證了整個基板上良好的工藝均勻性。Tricent的內部設計還包括快速的氣體切換、簡化的維護程序以及增強的清潔和冷卻能力等功能,在蝕刻和沈積過程中提供了高可重復性和長期穩定性。此外,AIXTRON Tricent通過提供經濟高效的自動化和監控要求解決方案,旨在方便地集成到現有生產線中。它與AIXTRON粒子檢測和氣體測量系統完全兼容。這種先進的反應堆提供了可靠和易於使用的功能,以產生先進的材料,特征尺寸減小,提高工藝均勻性。
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