二手 SVTA / SVT ASSOCIATES 440 S1 MBE #9230364 待售
看起來這件物品已經賣了。檢查下面的類似產品或與我們聯系,我們經驗豐富的團隊將為您找到它。
單擊可縮放
已售出
ID: 9230364
晶圓大小: 3"-4"
Molecular Beam Epitaxy (MBE) system, 3"-4"
SVT Silicon MBE epitaxial
OMICRON Electronics included
Method: Thin-film deposition of single crystals
Transistor: Cellular phones & WiFi
Load lock:
Chamber with water cooling
Quick hatch with O-ring seal & CF copper gasket option
GP Model 204 gold seal valve (Roughing line)
Sample heater: 200° C
Heater power supply: 1000 W
Dimension heater control loop
Wafer cassette holder, 8"
(8) MO Wafer holders, 8"
Manual gate valve (VAT) (Between loadlock & intermediate chamber)
HPS Series 421 cold cathode gauge & controller (Wide range)
Cryopump UHV, 6"
Gate valve: Cryopump, 4 1/2" (Pneumatic)
(3) Sorption pumps with plastic dawars, heaters & manual valves
PIBA Venturi pump with manual valve
GP Model 275 convectron gauge with digital controller
Vacuum plumbing for roughing
Intermediate chamber:
(2) Transfer rods: Growth chamber & outgas station
Cassette storage elevator (Manual)
Ion pump 400 1/8 with PERKIN ELMER 1500 digital controller
Sublimator & controller (TSP)
Gate valve: Ion pump, 8" (Pneumatic)
GP Model 307 extended (3) gauge controllers with ionization gauge
10" Gate valve (Manual) between intermediate chamber & outgas station
Rough plumbing with GP 204 gold seal valve
(2) Viewports for docking
Outgas station:
Water cooled chamber with expansion port
Viewport with shutter
Stage
Heater 1100° C with TC
Heater power supply: 1000 W
Dimension control loop
Ion gauge
Cryopump, 8" UHV
Gate valve,10" (Pneumatic) for cryopump
Rough plumbing with GP gold seal valve for chamber
Rough plumbing with GP gold seal valve for cryopump
Growth chamber:
Dia chamber, 24" with water cooling
Sample manipulator with Z-motion & 60 RPM rotation
Passivated graphite heater, 4": 1100°C
Heater power supply: 1000 W
(7) Dimension control loops
Ion pump 400 1/8 with PERKIN ELMER 1500 digital controller
Sublimator & controller: Ion pump (TSP)
VAT Valve, 8" (pneumatic): Ion pump
Cryropump, 8" UHV
Cryropump compressor run (3) UHV pumps, 8"
Gate valve, 10" (pneumatic) for Cryropump
GP Model 307 Ion gauge controller & gauge
(2) Thermionics 156 cc single pocket E-gun with pneumatic activated
soft shutter & water shroud
L-H 4x7cc Pocket E-gun with pneumatic activated soft shutter & water shroud
15 kW E-beam power supply with (3) sweeps
(4) Standard 20cc (K-Cells) effusion cells
(2) High temperature 10cc (K-Cells) effusion cells
(4) Power supplies 1000 W for Std K-cells
(2) Power supplies 1600 W for high temperature K-cells
(6) Water cooled effusion cell shrouds with pneumatic activated soft shutters
(10) Loop dimension multi-loop controllers with relay & CPU interface
SVT Shutter controller
(2) Sentinel III flux sensors & X'tal sensor with additional beam splitter
Sentinel III deposition controller
RHEED System with power supply, shutter, screen, lead window, & controller
Option: VIEETECH 30 key / KIMBALL PHYSICS 20 kev
RGA UTI-l00C System with TEKTRONIX 5111A scope & 5A 15N & 5B1 on plugins
Movable ion gauge: Flux control
Master shutter (Pneumatic)
Rough plumbing & gold seal valves: Cryropump
Bakeout heaters, timer, fans & soft blanket
Viewports & shutters required: Docking & E-guns (Reference port schedule)
(2) Implanter port soft shutters
System upgrade chambers, 8" / Manipulator, stages & valves
(6) PBN STD Crucibles
(2) Hi-temp crucibles
CPU 386/20 MHz IBM Compatible with hardware
Water distribution panel
System console
Rough plumbing with GP gold seal valve for main chamber
Gate valve, 10" (Manual) isolate growth chamber from intermediate chamber.
SVTA/SVT ASSOCIATES 440 S1 MBE(分子束外延)設備是一個先進的沈積平臺,用於創建具有極精確納米級控制的復雜的、超薄膜。該平臺通過使用高度聚焦和可調的元素或復合源光束來適應特定的應用,為薄膜沈積提供了極大的靈活性。這種分子束外延(MBE)系統基於先進的磁控管濺射工藝,使其成為先進的薄膜沈積工藝的最先進的外延工具。The440 S1利用先進的磁控管濺射技術和相關的源控制單元實現了最高的薄膜質量和增長動力。該源被設計和供電以實現高度均勻性,而生長速率可以用惰性或反應性氣體連續調制,以提高薄膜的性能。MBE能夠精確控制薄膜厚度以及整個晶片的厚度剖面,為半導體制造過程中關鍵層的沈積提供了一個獨特的均勻平臺。440 S1包括一套外延和表征的強大附件,如光學顯微鏡、實時厚度光譜、RHEED(反射電子能量損失光譜)和反射成像,用於評估和分析薄膜結構和表面形態。還有一個高溫退火模塊,用於激活層,以確保最佳的均勻性,結晶性和附著力。此外,440 S1還具有一臺快速可靠的機器,可在材料之間進行切換,為特定應用程序創建和優化多層提供了靈活性。440 S1還擁有高效的氣體控制工具,提高了反應動力學,進一步增強了均勻性。與源集成的精密氣流資產使反應性元素能夠沈積,而排氣模型則保持超低壓力水平,以確保最佳源性能。此外,簡單直觀的人機界面提供了方便的參數訪問和過程控制。SVTA 440 S1 MBE結構和操作先進,設計符合半導體行業的最高標準。該設備非常可靠,適用於太陽能電池、LED、半導體等多種應用的大批量生產。
還沒有評論