二手 AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 待售

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ID: 9233106
晶圓大小: 8"
優質的: 1998
Metal etcher, 8" Wafer shape: SNNF Chamber type / Location: Position A: (D+) Metal DPS+ Position B: (D+) Metal DPS+ Position C: (S+) ASP With enhancements Position D: (S+) ASP With enhancements Position E: STD Cool down Position F: (OA) Orienter Electrical requirements: Line frequency: 50 Hz EMO Guard ring Smoke detector at controller Smoke detector at MF Chamber A / B metal DPS+: Metal DPS R1 chamber: Upper chamber body: Anodizing Electrostatic chuck type: Polyamide ESC Turbo pump: SEIKO SEIKI STPH 1303C Upper chamber o-ring: Viton Dome: Rough DTCU: E DTCU Endpoint type: Monochromator Bias generator: ENI OEM-12B3 Bias match: Standard Capture ring: STD Polyamide ESC Source generator: Standard, 2500 W Slit valve o-ring: Viton Gate valve: TGV VAT65 Series Process control: Manometer (0.1 mtorr, 10 torr) Chamber foreline With heating jacket Cathode assy: Single type BCL3 Gas line block: Heater with watlow He UPC: MKS 649 Wafer lift cylinder: SMC Metal ASP+ chamber options: Process kit: Chuck O-Ring: Silicon Applicator: ASP+ Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW Wave guide: Phase MSG isolator MAGNETRON Head: MKS Process control: Manometer (10 torr, 100 torr) GDP Kit: Quartzware Slit valve o-ring: Viton Plasma tube o-ring: KALREZ Generator: AX2115 VDS Heater: VDS Gas line / Final valve heater Gas delivery options: VDS Type: Ultra clean Pallet options: Valve: FUJIKIN / VERIFLO Transducer: MILLIPORE / MKS852 Regulator: VERIFLO Filter: MILLIPORE Transducer: Display per stick MFC Type: Unit 8161 Gas panel pallet A / B: Pallet: 4/6 Gas line configuration: CL2: 200 SCCM BCL3: 100 SCCM N2: 20 SCCM CHF3: 20 SCCM O2: 500 SCCM SF6: 200 SCCM AR-S: 200 SCCM (2) Pallet corrosive gas lines (5) Pallet inert gas lines (7) Filters Gas panel pallet C / D: Pallet: 0/4 Gas line configuration: O2: 5 SLM N2-S: 1 SLM (3) Pallet inert gas lines (3) Filters Gas panel facilities: Top feed multi line drop Gas panel exhaust: Top Gas panel controller: VME I Mainframe: Facilities type: Regulated Facilities orientation: Mainframe facilities back connection Loadlock / Cassette options: Loadlock type: WBLL With autorotation Loadlock platform: UNIVERSAL Loadlock cover finish: Anti static painted Loadlock slit valve o-ring type: Viton Wafer mapping: Enhanced Integrated cassette sensor Transfer chamber options: Transfer chamber manual LID hoist Robot type: CENTURA VHP+ Robot blade: Roughened AL blade Wafer on blade detector Loadlock: Bottom vent Front panel: Anti static painted Signal light tower System monitors: Monitor type: CRT Monitor AC Rack: GFI: 30 mAMP Type: AC Gen rack, 84" Controller facility interface: Remote UPS interface Generator Rack: Cooling water: Manifold type Manifold facilities: Compression tube fittings, 3/4" Heat exchanger: H2000 DI EG Cathode H2000 DI EG Wall H2000 DI EG ASP Wall Heat exchanger interface Pump interface 1998 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Phase II是一種幹蝕刻/灰化設備,專為深矽蝕刻/灰化和光掩模修復而設計。該系統提供了出色的蝕刻/灰分均勻性,並在不同材料之間實現了很高的選擇性。AMAT Centura 5200 Phase II可以處理直徑達8英寸的晶片,蝕刻/沖洗時間長達10分鐘。APPLIED MATERIALS Centura 5200 Phase II是一個單晶圓處理器,旨在提供各種晶圓材料的高精度蝕刻和灰化。該單元包括一個淋浴頭RF(射頻)源、氣體輸送機、RF發生器、數字MFC(質量流控制器)和專屬的Ultra-Shear氣體夾帶工藝。熱惰性氣體與工藝氣體混合,以增加蝕刻/灰化率。射頻發電機采用了創新的雙頻設計,提供了廣泛的功率範圍,並允許最佳蝕刻/灰度配方。Centura 5200 Phase II提供了高級蝕刻/沖洗模塊,可實現更高的精度和均勻性。該模塊利用線性運動級和雙側載荷鎖在真空室之間傳輸晶片。腔室包含平面電感、氣體輸送工具和射頻耦合技術,用於將射頻功率直接輸送到晶片。腔體配有堅固耐振的部件,以確保連續蝕刻/灰化的可靠操作。AMAT/APPLICED MATERIALS Centura 5200 Phase II資產通過OES(光學端點檢測)提供非常嚴格的端點控制,並監控被監控的參數,如蝕刻速率、輪廓深度和蝕刻均勻性。該模型還具有強大的蝕刻工藝監視器,每隔幾秒精確計算一次蝕刻速率,並允許更高的工藝精度。AMAT Centura 5200 Phase II還實現了先進的光掩模修復功能,如拆除和更換陣列特征。APPLIED MATERIALS Centura 5200 Phase II提供模塊化設計,便於維護和升級。該設備利用簡單的圖形用戶界面來配置和操作系統。此外,該設備還能夠從遠程位置或通過USB端口下載配方。這樣可以方便地將配方優化或配方轉移到其他系統。總體而言,Centura 5200 Phase II是一款用途廣泛、先進的幹蝕刻/灰化機,在不同的材料之間提供了出色的均勻性和高選擇性,並提供了一系列功能,可以優化配方和光掩模修復。
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