二手 AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 待售
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ID: 9233106
晶圓大小: 8"
優質的: 1998
Metal etcher, 8"
Wafer shape: SNNF
Chamber type / Location:
Position A: (D+) Metal DPS+
Position B: (D+) Metal DPS+
Position C: (S+) ASP With enhancements
Position D: (S+) ASP With enhancements
Position E: STD Cool down
Position F: (OA) Orienter
Electrical requirements:
Line frequency: 50 Hz
EMO Guard ring
Smoke detector at controller
Smoke detector at MF
Chamber A / B metal DPS+:
Metal DPS R1 chamber:
Upper chamber body: Anodizing
Electrostatic chuck type: Polyamide ESC
Turbo pump: SEIKO SEIKI STPH 1303C
Upper chamber o-ring: Viton
Dome: Rough
DTCU: E DTCU
Endpoint type: Monochromator
Bias generator: ENI OEM-12B3
Bias match: Standard
Capture ring: STD Polyamide ESC
Source generator: Standard, 2500 W
Slit valve o-ring: Viton
Gate valve: TGV VAT65 Series
Process control: Manometer (0.1 mtorr, 10 torr)
Chamber foreline
With heating jacket
Cathode assy: Single type
BCL3 Gas line block: Heater with watlow
He UPC: MKS 649
Wafer lift cylinder: SMC
Metal ASP+ chamber options:
Process kit: Chuck
O-Ring: Silicon
Applicator: ASP+
Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW
Wave guide: Phase MSG isolator
MAGNETRON Head: MKS
Process control: Manometer (10 torr, 100 torr)
GDP Kit: Quartzware
Slit valve o-ring: Viton
Plasma tube o-ring: KALREZ
Generator: AX2115
VDS Heater: VDS Gas line / Final valve heater
Gas delivery options:
VDS Type: Ultra clean
Pallet options:
Valve: FUJIKIN / VERIFLO
Transducer: MILLIPORE / MKS852
Regulator: VERIFLO
Filter: MILLIPORE
Transducer: Display per stick
MFC Type: Unit 8161
Gas panel pallet A / B:
Pallet: 4/6
Gas line configuration:
CL2: 200 SCCM
BCL3: 100 SCCM
N2: 20 SCCM
CHF3: 20 SCCM
O2: 500 SCCM
SF6: 200 SCCM
AR-S: 200 SCCM
(2) Pallet corrosive gas lines
(5) Pallet inert gas lines
(7) Filters
Gas panel pallet C / D:
Pallet: 0/4
Gas line configuration:
O2: 5 SLM
N2-S: 1 SLM
(3) Pallet inert gas lines
(3) Filters
Gas panel facilities: Top feed multi line drop
Gas panel exhaust: Top
Gas panel controller: VME I
Mainframe:
Facilities type: Regulated
Facilities orientation: Mainframe facilities back connection
Loadlock / Cassette options:
Loadlock type: WBLL With autorotation
Loadlock platform: UNIVERSAL
Loadlock cover finish: Anti static painted
Loadlock slit valve o-ring type: Viton
Wafer mapping: Enhanced
Integrated cassette sensor
Transfer chamber options:
Transfer chamber manual LID hoist
Robot type: CENTURA VHP+
Robot blade: Roughened AL blade
Wafer on blade detector
Loadlock: Bottom vent
Front panel: Anti static painted
Signal light tower
System monitors:
Monitor type: CRT Monitor
AC Rack:
GFI: 30 mAMP
Type: AC Gen rack, 84"
Controller facility interface: Remote UPS interface
Generator Rack:
Cooling water: Manifold type
Manifold facilities: Compression tube fittings, 3/4"
Heat exchanger:
H2000 DI EG Cathode
H2000 DI EG Wall
H2000 DI EG ASP Wall
Heat exchanger interface
Pump interface
1998 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Phase II是一種幹蝕刻/灰化設備,專為深矽蝕刻/灰化和光掩模修復而設計。該系統提供了出色的蝕刻/灰分均勻性,並在不同材料之間實現了很高的選擇性。AMAT Centura 5200 Phase II可以處理直徑達8英寸的晶片,蝕刻/沖洗時間長達10分鐘。APPLIED MATERIALS Centura 5200 Phase II是一個單晶圓處理器,旨在提供各種晶圓材料的高精度蝕刻和灰化。該單元包括一個淋浴頭RF(射頻)源、氣體輸送機、RF發生器、數字MFC(質量流控制器)和專屬的Ultra-Shear氣體夾帶工藝。熱惰性氣體與工藝氣體混合,以增加蝕刻/灰化率。射頻發電機采用了創新的雙頻設計,提供了廣泛的功率範圍,並允許最佳蝕刻/灰度配方。Centura 5200 Phase II提供了高級蝕刻/沖洗模塊,可實現更高的精度和均勻性。該模塊利用線性運動級和雙側載荷鎖在真空室之間傳輸晶片。腔室包含平面電感、氣體輸送工具和射頻耦合技術,用於將射頻功率直接輸送到晶片。腔體配有堅固耐振的部件,以確保連續蝕刻/灰化的可靠操作。AMAT/APPLICED MATERIALS Centura 5200 Phase II資產通過OES(光學端點檢測)提供非常嚴格的端點控制,並監控被監控的參數,如蝕刻速率、輪廓深度和蝕刻均勻性。該模型還具有強大的蝕刻工藝監視器,每隔幾秒精確計算一次蝕刻速率,並允許更高的工藝精度。AMAT Centura 5200 Phase II還實現了先進的光掩模修復功能,如拆除和更換陣列特征。APPLIED MATERIALS Centura 5200 Phase II提供模塊化設計,便於維護和升級。該設備利用簡單的圖形用戶界面來配置和操作系統。此外,該設備還能夠從遠程位置或通過USB端口下載配方。這樣可以方便地將配方優化或配方轉移到其他系統。總體而言,Centura 5200 Phase II是一款用途廣泛、先進的幹蝕刻/灰化機,在不同的材料之間提供了出色的均勻性和高選擇性,並提供了一系列功能,可以優化配方和光掩模修復。
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