二手 ESC ELAS #9131115 待售
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ID: 9131115
晶圓大小: 6"-8"
RF / DC Sputtering system, 6"-8"
RF Magnetron
RF Diode operation
Loadlock cryo pump, 8"
Chamber, 10"
Rectangular
Heliarc welded
304 Stainless steel plate: 16 mm
View-port: Pyrex window
Pump-out port: 225 mm Diameter
Load lock:
2-Level elevator
Non-coated pallets loaded on upper level
Processed pallets unloaded from lower level
VITON O-ring
Feedthrough:
Linear bellows
Magnetically coupled drive
Drive:
Hydraulics
Low pressure drive
Motion:
Loading and unloading
Fully-automatic computer controlled
Capacity:
Diameter wafers: 6-150 mm
Diameter wafers: 4-200 mm
Drive:
Precision DC motor
With optical encoder feedback control
Chain drive
Labyrinth shielded
Option: DC Bias / RF Bias
Coating speed: 3-350 cm/min, Bi-directional
Vacuum system:
Load lock
CTI-CRYOGENICS Cryo-Torr 8 Vacuum pump
Vacuum valve: 6" ASA (7-1/8" Diameter) Gate valve
Electro-pneumatic operation
Valves: 1-1/2" Bellows sealed
Electro-pneumatic operation
Roughing pump: 27 CFM (762 l/min)
With process chamber
Main chamber:
CTI-CRYOGENICS Cryo-Torr 10 Vacuum pump
Vacuum valve: ASA Gate valve, 10"
Electro-pneumatic operation for gas throttling
Load lock and cryo regeneration: 27 CFM Mechanical pump
Anti-back-streaming trap for mechanical pump
1-1/2" Bellows sealed electro-pneumatic operation
Etch platform:
Moves vertically to engage / Disengage the pallet
Cooling: Water-cooled
Material: Stainless steel
Insulator: Pyrex
Dark space shield: Stainless steel
Residual gas analyzer
RF Generator:
Continuously-rated and specifically designed for sputtering: 1 kW
ISM Frequency: 13.56 MHz
FCC and OSHA
DC Magnetron power supply:
ADVANCED ENERGY Pinnacle Power supply, 12 kW
System performance specifications:
Process parameter control ranges:
Description / Minimum / Maximum / Units
Sputtering pressure / 1 / 90 / Millitor
Scan speed (bi-directional) / 3 / 350 / cm/min
DC Sput / 100 / 12,000 / Watts
RF Sput / 0.02 / 2.10 / kVA
- / 0.1 / 2.00 / kW
Etch revel (Note 2) / 0.02 / 1.50 / kVA
- / 0.1 / 1.50 / kW
DC Bias capability:
Internal mechanism: DC Power
DC Bias activated during DC sputtering
Power supplies: 150 V.
ESC ELAS是一種電化學蝕刻/灰化設備,旨在滿足現代薄膜電子的精密蝕刻要求。它是一個堅固而高效的蝕刻系統,利用高密度、脈沖直流功率進行快速、均勻的處理。該單元設計用於廣泛的蝕刻應用,包括金屬、氧化物、聚合物等可蝕刻薄膜材料。該工藝能夠實現每分鐘高達幾百納米的蝕刻速率,對選擇性、深度、線寬和表面粗糙度進行非常精確的控制。ELAS機器是建立在成熟的技術,包括一個密封,銅套軀幹絕緣和耐腐蝕。該機組還配備了集成加熱元件,以保持穩定的溫度和自調壓力調節的功率調節蝕刻室。這確保了統一的蝕刻過程,並促進了極其精確的可重復結果。為達到最佳蝕刻速率,該工具采用了多種蝕刻機構,包括化學氣相沈積或CVD,以及高溫爐工藝。單獨控制的惰性氣氛允許更長的蝕刻時間,產生更深的蝕刻。或者,在真空環境中使用等離子體蝕刻可以實現效率更高的短時蝕刻。ESC ELAS資產可以處理範圍廣泛的晶圓尺寸,從小型芯片到大型矩形面板。它還配備了XYZ級,允許在處理過程中精確放置和固定工人。該模型還包括電子束和X射線蝕刻工藝,以獲得更精確的蝕刻結果。所有這些功能結合在一起,使ELAS成為精確蝕刻需求的絕佳選擇。該裝置非常可靠,能夠持續產生高質量的蝕刻結果。此外,它允許用戶通過高級診斷程序持續監控蝕刻過程,並提供高重復性的結果。因此,它是工業市場上高精度電子生產應用的理想選擇。
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