二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282599 待售

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ID: 9282599
晶圓大小: 12"
優質的: 2015
Vertical LPCVD Furnace, 12" VCM-5D-012L Heater Maximum operating temperature: 300°C ART Control N2 Load lock Wafer type: Si SEMI STD-Notch (50) Production wafers Loading area light: White (LED) RCU Duct length FNC to RCU: 20m Chemical prefilter hydrocarb Chemical prefilter location: FNC Top Dry pumps missing Wafer / Carrier handler: Carrier type: FOUP / 25-Slots SEMI STD ENTEGRIS A300 FOUP Carrier stage capacity: 10 Info pad A,B: Pin Info pad C,D: Pin Fork material: Al2O3 Furnace facilities: Furnace exhaust connection point: Top connection Cooling water connection point: Bottom connection Air intake point: Top Gas distribution system: IGS Type: IGS 1.5" W-Seal rail-mount FUJIKIN IGS System Tubing bends: <90°C PALL IGS Final filter IGS Regulator: CKD HORIBA STEC IGS MFC Digital HORIBA SEC-G111 IGS MFC For low flow N2 purge IGS Press transducer: Nagano HORIBA STEC LSC-F530 Liquid source vapor system For ZAC HORIBA STEC TL-2014 Auto refill system TMA: AIR LEQUIDE / CANDI Auto refill system ZAC: AIR LEQUIDE / CANDI OP-500H-RE1 Ozone delivery system Injector O-Ring material: DU353 Gas facilities: Incoming gas connection point: Bottom connection Gas VENT Connection point: Bottom connection Exhaust VENT Connection point: Bottom connection Gas unit exhaust connection point: Bottom connection Exhaust: Vacuum gauge pressure controller: MKS Capacitance manometer (Hot) Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot) Vacuum gauge pump monitor: MKS Capacitance manometer (Hot) CKD VEC-VH8-X0110 Main valve VYX-0279-CONT Controller EDWARDS iXH-1820T Pump EDWARDS TPU Abatement system Type: Burning type Exhaust box: Wide type (1200mm) Exhaust O-Ring material: DU353 FNC Power box: 30m FNC RCU: 30m Power box RCU: 30m Power box pump unit: 30m Power box refill system: 30m Host communications: Comply with GJG Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX) Ingenio OHT Capability Load port operation: Lower and upper PIO I/F Location: FNC Top PIO: TEL HOKUYO DMS-HB1-Z PIO Carrier ID Reader writer type: RF CIDRW Lower L/P: Read CIDRW Upper L/P: Read CIDRW FIMS: Read / Write CIDRW: HOKUYO DMS-HB1-Z Series CIDRW Tag orientation: Vertical Customized management signals: PT / Water Interface: Signal tower model: LCE Series Signal tower colors: Red / Blue / Yellow / Green Signal tower location: Front for (10) Stockers (Left) Front operation panel MMI and gas flowchart: Gas box and front operation panel Installed Indicator type: HOKUYO DMS-HB1-Z series Operator switch: Operator access / White cover with orange light Pressure display unit: MPa / Torr Cabinet Exhaust pressure display: Pa Power: Power cable input entrance loc: Power box top Power supply: 3 Phase connection type: Star connection 200/400 VAC, 60 Hz, 3 Phase 2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是為電子設備的先進製造而設計的最先進的蝕刻器/asher。這一設備的設計目的是為高達+/-15A的精確度提供透明薄膜的均勻蝕刻和灰度處理,提供卓越的制造性能。TEL Telformula ALD High-K的占地面積減少,高度僅為21厘米,與其他asher相比,它具有卓越的可用性,非常適合需要高精度蝕刻的應用。TOKYO ELECTRON TELFORMULA ALD High-K擁有先進的CIU(Chamber Interface Unit),使其在廣泛的工藝範圍內具有高蝕刻和灰化能力。通過將低壓、高溫和低熱預算相結合,該裝置能夠以可重復和可控的方式創建復雜的結構和特征,提供優異的效果。此外,Telformula ALD High-K能夠使用註塑面罩生成更復雜的圖案,並能夠利用線條和空間幾何形狀生成更精細的特征。TEL/TOKYO ELECTRON TELFORMULA ALD High-K具有可調節共振頻率的整合式脈沖等離子體模式,增加蝕刻速率,同時減少整體蝕刻時間。這為各種薄膜和應用程序提供了更快的周轉時間。此外,TEL Telformula ALD High-K還具有全自動機器人晶片加載和質量控制系統,可提高過程控制和可重復性。TOKYO ELECTRON TELFORMULA ALD High-K具有耐用性和可靠性,對於要求最苛刻的應用,每年只需要定期維護一次。該裝置還設計為與金屬、合金、陶瓷等多種材料兼容,為工藝要求不同的制造商提供了更多的通用性。總體而言,Telformula ALD High-K是一款可靠、精確的蝕刻器/asher,專為各種現代電子設備設計,具有卓越的工藝控制功能。它提供多種蝕刻和灰化模式,能夠調整諧振頻率,從而改進過程控制和周轉時間。TEL/TOKYO ELECTRON TELFORMULA ALD High-K被設計為耐用可靠,並提供與多種材料的兼容性,提供制造商生產更大的通用性。
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