二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282599 待售
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ID: 9282599
晶圓大小: 12"
優質的: 2015
Vertical LPCVD Furnace, 12"
VCM-5D-012L Heater
Maximum operating temperature: 300°C
ART Control
N2 Load lock
Wafer type: Si SEMI STD-Notch
(50) Production wafers
Loading area light: White (LED)
RCU Duct length FNC to RCU: 20m
Chemical prefilter hydrocarb
Chemical prefilter location: FNC Top
Dry pumps missing
Wafer / Carrier handler:
Carrier type: FOUP / 25-Slots SEMI STD
ENTEGRIS A300 FOUP
Carrier stage capacity: 10
Info pad A,B: Pin
Info pad C,D: Pin
Fork material: Al2O3
Furnace facilities:
Furnace exhaust connection point: Top connection
Cooling water connection point: Bottom connection
Air intake point: Top
Gas distribution system:
IGS Type: IGS 1.5" W-Seal rail-mount
FUJIKIN IGS System
Tubing bends: <90°C
PALL IGS Final filter
IGS Regulator: CKD
HORIBA STEC IGS MFC Digital
HORIBA SEC-G111 IGS MFC For low flow N2 purge
IGS Press transducer: Nagano
HORIBA STEC LSC-F530 Liquid source vapor system
For ZAC HORIBA STEC TL-2014
Auto refill system TMA: AIR LEQUIDE / CANDI
Auto refill system ZAC: AIR LEQUIDE / CANDI
OP-500H-RE1 Ozone delivery system
Injector O-Ring material: DU353
Gas facilities:
Incoming gas connection point: Bottom connection
Gas VENT Connection point: Bottom connection
Exhaust VENT Connection point: Bottom connection
Gas unit exhaust connection point: Bottom connection
Exhaust:
Vacuum gauge pressure controller: MKS Capacitance manometer (Hot)
Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot)
Vacuum gauge pump monitor: MKS Capacitance manometer (Hot)
CKD VEC-VH8-X0110 Main valve
VYX-0279-CONT Controller
EDWARDS iXH-1820T Pump
EDWARDS TPU Abatement system
Type: Burning type
Exhaust box: Wide type (1200mm)
Exhaust O-Ring material: DU353
FNC Power box: 30m
FNC RCU: 30m
Power box RCU: 30m
Power box pump unit: 30m
Power box refill system: 30m
Host communications: Comply with GJG
Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX)
Ingenio
OHT Capability
Load port operation: Lower and upper
PIO I/F Location: FNC Top
PIO: TEL
HOKUYO DMS-HB1-Z PIO
Carrier ID Reader writer type: RF
CIDRW Lower L/P: Read
CIDRW Upper L/P: Read
CIDRW FIMS: Read / Write
CIDRW: HOKUYO DMS-HB1-Z Series
CIDRW Tag orientation: Vertical
Customized management signals: PT / Water
Interface:
Signal tower model: LCE Series
Signal tower colors: Red / Blue / Yellow / Green
Signal tower location: Front for (10) Stockers (Left)
Front operation panel
MMI and gas flowchart: Gas box and front operation panel Installed
Indicator type: HOKUYO DMS-HB1-Z series
Operator switch: Operator access / White cover with orange light
Pressure display unit: MPa / Torr
Cabinet Exhaust pressure display: Pa
Power:
Power cable input entrance loc: Power box top
Power supply:
3 Phase connection type: Star connection
200/400 VAC, 60 Hz, 3 Phase
2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是為電子設備的先進製造而設計的最先進的蝕刻器/asher。這一設備的設計目的是為高達+/-15A的精確度提供透明薄膜的均勻蝕刻和灰度處理,提供卓越的制造性能。TEL Telformula ALD High-K的占地面積減少,高度僅為21厘米,與其他asher相比,它具有卓越的可用性,非常適合需要高精度蝕刻的應用。TOKYO ELECTRON TELFORMULA ALD High-K擁有先進的CIU(Chamber Interface Unit),使其在廣泛的工藝範圍內具有高蝕刻和灰化能力。通過將低壓、高溫和低熱預算相結合,該裝置能夠以可重復和可控的方式創建復雜的結構和特征,提供優異的效果。此外,Telformula ALD High-K能夠使用註塑面罩生成更復雜的圖案,並能夠利用線條和空間幾何形狀生成更精細的特征。TEL/TOKYO ELECTRON TELFORMULA ALD High-K具有可調節共振頻率的整合式脈沖等離子體模式,增加蝕刻速率,同時減少整體蝕刻時間。這為各種薄膜和應用程序提供了更快的周轉時間。此外,TEL Telformula ALD High-K還具有全自動機器人晶片加載和質量控制系統,可提高過程控制和可重復性。TOKYO ELECTRON TELFORMULA ALD High-K具有耐用性和可靠性,對於要求最苛刻的應用,每年只需要定期維護一次。該裝置還設計為與金屬、合金、陶瓷等多種材料兼容,為工藝要求不同的制造商提供了更多的通用性。總體而言,Telformula ALD High-K是一款可靠、精確的蝕刻器/asher,專為各種現代電子設備設計,具有卓越的工藝控制功能。它提供多種蝕刻和灰化模式,能夠調整諧振頻率,從而改進過程控制和周轉時間。TEL/TOKYO ELECTRON TELFORMULA ALD High-K被設計為耐用可靠,並提供與多種材料的兼容性,提供制造商生產更大的通用性。
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