二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282608 待售

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ID: 9282608
晶圓大小: 12"
優質的: 2015
Vertical LPCVD Furnace, 12" VCM-5D-012L Heater Maximum operating temperature: 300°C ART Control N2 Load lock Wafer type: Si SEMI STD-Notch (50) Production wafers Dry pumps missing Loading area light: White (LED) RCU Duct length FNC to RCU: 20m Chemical prefilter hydrocarb Chemical prefilter location: FNC Top Wafer / Carrier handler: Carrier type: FOUP / 25-Slots SEMI STD ENTEGRIS A300 FOUP Carrier stage capacity: 10 Info pad A,B: Pin Info pad C,D: Pin Fork material: Al2O3 Furnace facilities: Furnace exhaust connection point: Top connection Cooling water connection point: Bottom connection Air intake point: Top Gas distribution system: IGS Type: IGS 1.5" W-Seal rail-mount FUJIKIN IGS System Tubing bends: <90°C PALL IGS Final filter IGS Regulator: CKD HORIBA STEC IGS MFC Digital HORIBA SEC-G111 IGS MFC For low flow N2 purge IGS Press transducer: Nagano HORIBA STEC LSC-F530 Liquid source vapor system For ZAC HORIBA STEC TL-2014 Auto refill system TMA: AIR LEQUIDE / CANDI Auto refill system ZAC: AIR LEQUIDE / CANDI OP-500H-RE1 Ozone delivery system Injector O-Ring material: DU353 Gas facilities: Incoming gas connection point: Bottom connection Gas VENT Connection point: Bottom connection Exhaust VENT Connection point: Bottom connection Gas unit exhaust connection point: Bottom connection Exhaust: Vacuum gauge pressure controller: MKS Capacitance manometer (Hot) Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot) Vacuum gauge pump monitor: MKS Capacitance manometer (Hot) CKD VEC-VH8-X0110 Main valve VYX-0279-CONT Controller EDWARDS iXH-1820T Pump EDWARDS TPU Abatement system Type: Burning type Exhaust box: Wide type (1200 mm) Exhaust O-Ring material: DU353 FNC Power box: 30m FNC RCU: 30m Power box RCU: 30m Power box pump unit: 30m Power box refill system: 30m Host communications: Comply with GJG Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX) Ingenio OHT Capability Load port operation: Lower and upper PIO I/F Location: FNC Top PIO Provided by: TEL HOKUYO DMS-HB1-Z PIO Carrier ID Reader writer type: RF CIDRW Lower L/P: Read CIDRW Upper L/P: Read CIDRW FIMS: Read/Write CIDRW: HOKUYO DMS-HB1-Z Series CIDRW Tag orientation: Vertical Customized management signals: PT/Water Interface: Signal tower model: LCE Series Signal tower colors: Red/Blue/Yellow/Green Signal tower location: Front for 10 Stocker (Left) Front operation panel MMI and gas flowchart: Gas box and front operation panel Installed Indicator type: HOKUYO DMS-HB1-Z Series Operator switch: Operator access / White cover with orange light Pressure display unit: MPa / Torr Cabinet exhaust pressure display: Pa Warning label: Chinese/English Power: Power cable input entrance loc: Power box top Power supply: 3 Phase connection type: Star connection 200/400 VAC, 60 Hz, 3 Phase 2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是為高k介電薄膜層高精度沈積而設計的先進蝕刻及各向異性蝕刻設備。該系統利用先進的Telformula ALD技術,提供卓越的線路清晰度和出色的步長覆蓋,提高了設備的產量和性能。該單元使用戶能夠將高性能介電層與SiO2、SiN、SiC或它們的任意組合一起沈積。它在手動和自動化模式下工作,允許廣泛的蝕刻過程。該機還利用反應性離子蝕刻(RIE)結構對圖樣和線條結構進行高精度蝕刻。TEL Telformula ALD High-K專為批處理而設計,為大量零件和基材提供高通量蝕刻。該工具配備了Advanced Process Control (APC)軟件,這是一個用於監控蝕刻過程的強大的新工具。該軟件提供對蝕刻工藝參數的實時分析,並利用原位反饋控制最大限度地減少變化。該資產具有廣泛的工藝參數,包括0°C至350°C的蝕刻溫度範圍、高達500°C的基板溫度、高達6Torr的蝕刻壓力、長達5分鐘的蝕刻時間以及多個進氣閥選項。該型號還提供了可選的壓力。中流(PIF)設備,為蝕刻過程中的蝕刻壓力和氣流提供精確的控制。TOKYO ELECTRON TELFORMULA ALD High-K的設計是為了與多種抗蝕劑材料兼容,並允許精確控制蝕刻參數以實現可重復的高性能蝕刻結果。其優化的工藝平臺提高了生產率,具有比其他蝕刻系統更高的蝕刻速率和更高的裝置產量。這款蝕刻器還能夠產生低至0.3 µm線寬的高分辨率特性,具有非凡的均勻性和可重復性,非常適合發展具有精確線定義和特征均勻性的半導體器件。
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