二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282608 待售
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ID: 9282608
晶圓大小: 12"
優質的: 2015
Vertical LPCVD Furnace, 12"
VCM-5D-012L Heater
Maximum operating temperature: 300°C
ART Control
N2 Load lock
Wafer type: Si SEMI STD-Notch
(50) Production wafers
Dry pumps missing
Loading area light: White (LED)
RCU Duct length FNC to RCU: 20m
Chemical prefilter hydrocarb
Chemical prefilter location: FNC Top
Wafer / Carrier handler:
Carrier type: FOUP / 25-Slots SEMI STD
ENTEGRIS A300 FOUP
Carrier stage capacity: 10
Info pad A,B: Pin
Info pad C,D: Pin
Fork material: Al2O3
Furnace facilities:
Furnace exhaust connection point: Top connection
Cooling water connection point: Bottom connection
Air intake point: Top
Gas distribution system:
IGS Type: IGS 1.5" W-Seal rail-mount
FUJIKIN IGS System
Tubing bends: <90°C
PALL IGS Final filter
IGS Regulator: CKD
HORIBA STEC IGS MFC Digital
HORIBA SEC-G111 IGS MFC For low flow N2 purge
IGS Press transducer: Nagano
HORIBA STEC LSC-F530 Liquid source vapor system
For ZAC HORIBA STEC TL-2014
Auto refill system TMA: AIR LEQUIDE / CANDI
Auto refill system ZAC: AIR LEQUIDE / CANDI
OP-500H-RE1 Ozone delivery system
Injector O-Ring material: DU353
Gas facilities:
Incoming gas connection point: Bottom connection
Gas VENT Connection point: Bottom connection
Exhaust VENT Connection point: Bottom connection
Gas unit exhaust connection point: Bottom connection
Exhaust:
Vacuum gauge pressure controller: MKS Capacitance manometer (Hot)
Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot)
Vacuum gauge pump monitor: MKS Capacitance manometer (Hot)
CKD VEC-VH8-X0110 Main valve
VYX-0279-CONT Controller
EDWARDS iXH-1820T Pump
EDWARDS TPU Abatement system
Type: Burning type
Exhaust box: Wide type (1200 mm)
Exhaust O-Ring material: DU353
FNC Power box: 30m
FNC RCU: 30m
Power box RCU: 30m
Power box pump unit: 30m
Power box refill system: 30m
Host communications: Comply with GJG
Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX)
Ingenio
OHT Capability
Load port operation: Lower and upper
PIO I/F Location: FNC Top
PIO Provided by: TEL
HOKUYO DMS-HB1-Z PIO
Carrier ID Reader writer type: RF
CIDRW Lower L/P: Read
CIDRW Upper L/P: Read
CIDRW FIMS: Read/Write
CIDRW: HOKUYO DMS-HB1-Z Series
CIDRW Tag orientation: Vertical
Customized management signals: PT/Water
Interface:
Signal tower model: LCE Series
Signal tower colors: Red/Blue/Yellow/Green
Signal tower location: Front for 10 Stocker (Left)
Front operation panel
MMI and gas flowchart: Gas box and front operation panel Installed
Indicator type: HOKUYO DMS-HB1-Z Series
Operator switch: Operator access / White cover with orange light
Pressure display unit: MPa / Torr
Cabinet exhaust pressure display: Pa
Warning label: Chinese/English
Power:
Power cable input entrance loc: Power box top
Power supply:
3 Phase connection type: Star connection
200/400 VAC, 60 Hz, 3 Phase
2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是為高k介電薄膜層高精度沈積而設計的先進蝕刻及各向異性蝕刻設備。該系統利用先進的Telformula ALD技術,提供卓越的線路清晰度和出色的步長覆蓋,提高了設備的產量和性能。該單元使用戶能夠將高性能介電層與SiO2、SiN、SiC或它們的任意組合一起沈積。它在手動和自動化模式下工作,允許廣泛的蝕刻過程。該機還利用反應性離子蝕刻(RIE)結構對圖樣和線條結構進行高精度蝕刻。TEL Telformula ALD High-K專為批處理而設計,為大量零件和基材提供高通量蝕刻。該工具配備了Advanced Process Control (APC)軟件,這是一個用於監控蝕刻過程的強大的新工具。該軟件提供對蝕刻工藝參數的實時分析,並利用原位反饋控制最大限度地減少變化。該資產具有廣泛的工藝參數,包括0°C至350°C的蝕刻溫度範圍、高達500°C的基板溫度、高達6Torr的蝕刻壓力、長達5分鐘的蝕刻時間以及多個進氣閥選項。該型號還提供了可選的壓力。中流(PIF)設備,為蝕刻過程中的蝕刻壓力和氣流提供精確的控制。TOKYO ELECTRON TELFORMULA ALD High-K的設計是為了與多種抗蝕劑材料兼容,並允許精確控制蝕刻參數以實現可重復的高性能蝕刻結果。其優化的工藝平臺提高了生產率,具有比其他蝕刻系統更高的蝕刻速率和更高的裝置產量。這款蝕刻器還能夠產生低至0.3 µm線寬的高分辨率特性,具有非凡的均勻性和可重復性,非常適合發展具有精確線定義和特征均勻性的半導體器件。
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