二手 EATON NOVA / AXCELIS GSD 200E2 #9021872 待售

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ID: 9021872
晶圓大小: 6"-8"
HC implanter, 6"-8" 180 KeV Line power: Input power: 208 V, 3 phase, 60 Hz, 92 A, 33 kVA, I/P breaker: 125 A Output power: 180 KeV, 20 mA Endstation module: Mini-environment: Synetics ATM robot: SEN Notch / flat finder: flat Dummy cassette: 2 in 1 Load buffer: 1 Vacuum cassette: domed pin Cassette table: 4 Load port interface: manual Beam profile oscilloscope: Tektronix TDS210 Cell controller / version: MVME 177-03 Load lock type: GSD 100/200, HE Main SUN computer: Sparc Station 5 Second SUN computer: Spare 5 Second SUN monitor: Sun Tape reader: n/a Printer: HP Process module: Disk: none Faraday flag: Y (no burn-through sensor) Electron / plasma shower: secondary electron Plasma shower PS: EMI EMS series Bias aperture: Y Shower gas panel: Y (Ar) Ar / Xe bleed MFC: Unit 5 SCCM In-vac arm: Y Wafer holder: Y Pedestal: Y Gyro / angle: NF-GSD 100, Quad ± 11 deg Linear drive: Y Rotary drive: direct drive HYT: no Beamline module: HV power supply: Advance HV HV stack: OL8000/104/05, 100 kV Prost accel. volt: OL800/104/05, 100 kV Extraction suppression PS: Glassman, m/n: PS/NV-15NN33 AMU: BSL AMU PS: EMI EMS 40-150 Hall probe: AMU Max extraction voltage: 90 KeV, max acc. voltage: 90 KeV Beam profiler hole: extended Y-scan Decel. funcion: n/a Beamline purge kit: Y Beamline turbo: Y Source module: Source head: ELS without vaporizer Filament PS: EMS 10-60 Arc PS: EMS 150-7 Cathode PS: Y Vaporizer PS: present Source magnet: std Source magnet PS: EMS 25-25 Source bushing: std (orange) Extraction assembly: LE-VAE, 33 type Selectable resolving aperture: Y Source ISO transformer: dry Source injection kit: MKS 1150 vapor source MFC Source housing exhaust valve: Y Gas box module: Gas box type: modular Gas loop #1: Ar, HP (external supply) Gas loop #2: BF3, SDS (fitting: 1/4" VCR) Gas loop #3: AsH3, SDS (fitting: 1/2" VCR) Gas loop #4: PH3, SDS (fitting: 1/2" VCR) Loop #1 MFC: MKS, m/n 1179A-14493, 10 sccm, N2, gold finger conn. Loop #2 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn. Loop #3 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn. Loop #4 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn. Vacuum system: P1 / source turbo: Seiko Seiki, STP-A2203C P8 turbo: Leybold 1000C P3 / V3 cryo pump: CTI-10 P9 / disk cryo pump: n/a (flange ready) RP2: Ebara A70W, 200-220 V, 3 phase, 50/60 Hz, 29.5 A IG1: glass, G-75 PIG1: n/a IG2: glass, G-75 IG3: glass, G-75 IG4: n/a IG controller: GP-307 Safety options: VESDA: n/a Smoke detector: Y CES options: n/a Others: Enclosures: OK Ground bars: 5 SECS / GEM function: GEM SPC function: yes Dose controller PComp. algorithm type: standard PComp. Crated 1998 vintage.
EATON NOVA/AXCELIS GSD 200E2是一種離子植入器和監視器。它被設計用於半導體制造設施的離子植入過程。此過程用於修改不同離子的不同材料,以在材料中產生不同的性質或特征,例如在矽材料中添加雜質摻雜原子以獲得專門的電子性質。AXCELIS GSD 200E-2利用OptiCap混合光束成形技術和IonControl SmartScan離子束輸送設備等專有組件來確保植入過程中的最高精度和準確性。這對於確保生成的材料具有所需的屬性和特征至關重要。EATON NOVA GSD 200 E2還使用了一系列傳感器來監測植入室中的顆粒物汙染物,以及用於跟蹤系統性能和診斷。這對於確保植入過程針對最終材料的最高質量水平進行優化非常重要。EATON NOVA GSD 200E2單元由幾個組件組成,包括離子源、植入室、真空泵機、RF加速、高壓工具、離子控制控制臺和高參數器控制資產。離子源負責為植入過程產生離子,而植入室則容納這些離子,並有助於將其加速到適當的能級。真空泵送模型負責為持續植入創造適當的真空環境。射頻加速設備將離子提升到所需的能量狀態進行植入。高壓系統提供這些過程所需的電力。離子控制控制臺允許操作員控制植入過程,而高參數控制單元則可以監視植入過程和其他傳感器。此外,EATON NOVA GSD 200E-2還配備了一個集成的被動等離子體中和室,從而無需單獨的裝置來中和植入室。這一特性有助於確保實現更高水平的腔室穩定性,並減少因工藝而受到汙染的可能性。EATON NOVA/AXCELIS GSD 200E-2是一種先進的離子植入器和監控器,它對於確保植入過程中達到最高精度和準確度是至關重要的,並且所得到的材料具有所需的性能。這就是為什麼它被用於全球許多半導體制造設施的原因。
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