二手 ALLWIN21 AW 903e #9201821 待售
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ID: 9201821
晶圓大小: 3"-6"
TTW Plasma etcher, 3"-6"
Wafer loading: 3-Axis robot
Stationary cassette plate
Plasma power: RF 13.56 MHz
Type: Parallel / Single wafer process
Through the wall (TTW)
Gas lines: 1-3 Lines
Throughput: 30-60 WPH, Process dependent
Temperature: 6-65ºC (±2 ºC) Capability
Gas lines: (4) Gas lines with MFCs
Etcher rate:
AW-901eR: 0-8000A / minute
AW-903eR: 0-4000A / minute
Process dependent
Uniformity: Up to ±3%, Process dependent
Particulate: <0.05 / cm2
Selectivity:
901eR: 2-20:1
AW-903eR: 2-20:1
Process dependent
MTBF / MTTA / MTTR: 450 Hours / 100 Hours / 3.5 Hours
Options:
EOP Module with PCB
GEM/SECS II Function
Lamp tower alarm with buzzer
Throttle valve pressure control
Vacuum pump
Chiller for chuck and chamber
Through the wall
Main frame, standard
Pentium class PC with
Keyboard
Mouse
USB
SW Backup
Cables
Chuck:3"-6"
Wafer aligner / Cooling station
3-Axis integrated solid robot:
H-Zero (Standard)
H1-7 x 10.5 (TTW)
Fixed cassette station:
Chuck assembly
901eR Non-anodized
903eR Anodized with flat
903eR Anodized with flat
903eR Non-anodized with flat
Reactor Assembly:
901eR Non-anodized
903eR Anodized
903eR Non-anodized
903eR High performance
Direct cooling
Non direct cooling
Pins:
Quartz
Ceramic SST
Centering ring:
Aluminum
Ceramic
Main control board:
Gas box with (4) inline gas lines, MFC, filters, and pneumatic valves
RF Matching network with PCB
RF Generator: 13.56 MHz
MKS Elite: 300 HD
MKS Elite: 600 HD
MKS Elite: 1000 HD
ENI ACG 3
ENI ACG 10
AC / DC Box
ATM Sensor
UPC Pressure control
225 SCCM: 901eR
2000 SCCM: 903eR
MKS Baratron with peumatic Iiolation valve
Main vacuum valves
Front EMO interlocks
Touch screen GU, 15"
AW-901eR AW-903eR
Material Etched Polysilicon / Nitride Oxide,SOG,Nitride
Main etchant gases SG6, O2 / SF6,O2 CHF3,SF6,He
Other gases CHCLF2 / None None
Pressure (mTorr) 200-450 / 250-350 1600-3000
RF Power (Watts) 100-250 / 200-300 400-600
Temperature (C) 30 / 30 23
AC Power:
AC Module: 200-240 VAC Selectable, 50/60 Hz, 3-wire single-phase
Temperature controller: 200-240 VAC, 50/60 Hz, 3-wire single-phase
Vacuum pump: 208-230 / 460 VAC, 60 Hz or 200-220 / 380 VAC, 50Hz, 3 Phase
RF Generator: 200-240 VAC
PC / Monitor: 115 VAC
Cabinet exhaust: 100 cfm.
ALLWIN21 AW 903 e是為半導體工業設計的高性能快速熱處理器（RTP）。它是晶片和基板的溫度上升/下降處理以及激光或離子植入器的理想選擇。AW 903 e在高達900°C的溫度下提供精確的熱控制,並提供快速的斜坡速率（100°C/秒至800°C/秒）。ALLWIN21 AW 903 e采用雙壁冷卻設備，熱質量大，可精確控制基板溫度。它具有高精確率區域（HARZ）溫度控制功能,可根據在HARZ中花費的時間對基板產生精確的熱影響。AW 903e還配備了全自動工藝室清洗系統，旨在最大限度地減少間歇間隙清洗時的停機時間。腔室可以用H2O2、幹氮或任何其他合適的清潔液清洗；清潔也可以手動進行。ALLWIN21 AW 903 e安裝在不銹鋼機櫃中,具有易於使用的界面和計算機控制的控制臺,可提供完整的過程控制。控制臺允許設置參數值、自定義熱配置文件和定義流程序列。此外,AW 903 e允許遠程操作,為控制設備提供了一種方便、安全和可靠的方法。為了安全起見,ALLWIN21 AW 903 e具有若幹先進的安全功能,如惰性氣體凈化、緊急關閉開關、快速降壓壓力閥和溫度過載開關。其他功能還包括一個有多個光學窗口的腔室，以便對過程進行目視檢查，以及一個自動重置開關，將腔室壓力和溫度重置回正常操作水平。AW 903e是半導體加工的理想快速熱處理器（RTP）。它提供精確的熱控制、快速的坡道速率以及全自動的腔室清洗機，使其成為晶圓和基板加工的理想選擇。高級安全功能在使用處理器時提供了省心,而且控制臺允許輕松定制熱量配置文件和過程序列。
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