二手 AIXTRON AIX G5 HT #9074863 待售
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ID: 9074863
優質的: 2011
MOVPE Planetary Reactor
Includes Transfer Module
Application: 14x4" wafer deposition
Planetary Reactor System:
Cabinet with lining
Stainless steel reactor chamber: water-cooled, vertical lid lifting mechanism
High Growth Rate (HGR) injector: water-cooled, SiC coated graphite planetary disk, sandwich design
Max. light-pipe temperature: 1250ºC
SiC coated graphite wafer holder (satellite) with Gas Foil Rotation
(2) In-situ monitoring viewports from top
Ferro-fluidics feedthrough for main rotation with rotation monitoring
Center purge line
Thermostated reactor chamber ceiling
Graphite exhaust collector and outer liner to prevent deposition on chamber wall
Individual Satellite Rotation Drive (EqiSat)
Glove box
Main Gas Blending Unit
RF-Heating Unit
Vacuum Cleaner for glove box
Vacuum System
Large Particle Trap for nitride application
Process pump
Automated satellite transfer system for high temperature operation (600ºC)
Computer Control System
Remote PC
Safety System
Gas Handling System:
(5) MO-G1 Standard Metal-Organic Channel (2xTMGa/H2, 2xTEGa/N2, 1xTMAI/H2)
(2) MO-G1-D Double Standard Metal-Organic Channel (2xCp2Mg/H2, 2xTMIn/N2)
(1) MO-G2-T Triple Standard Gas Channel (3xNH3)
(1) MO-G3_Double Dilution Metal-Organic Channel (N.N./N2)
(1) MO-G4 Double Dilution Gas Channel with additional pusher (1xSiH4/H2)
(1) MO-G5-10M Vacuum Lines
(3) MO-G6 Dummy Line (2xMO, 1xHydride Top run/vent)
(1) N2/H2 Separation of two MO-Stacks
(2) N2/H2 Mixture unit for one Run/Vent Stack (1xMO Run/Vent)
(2) MO-Differential Vent-Run Pressure Balancing (2xMO Run/Vent)
(2) Upgrade Thermo Bath
MO-Standard Gas Channel (5% Cl2/N2 for reactor clean)
EpiCurve TT TWO:
Emissivity corrected pyrometry at 950nm
Individual wafer measurement of surface temperature
High position resolution
Real-time measurement
Temperature accuracy: +/-1K
Growth rate measurement at selectable second wavelength: 950 +405nm for GaN
19" Electronic controller, including light source and detector
User manual and CD software
Purification:
(2) Moisture Sensor (H2, N2):
DP measurement range possible down to -120ºC (1ppb)
Integration of Read-Out Value into control system
Purifier Cl2
Extensions:
Vacuum Tweezer
N2 gun for glove box
Cl2 Scrubber: Cleansorb CS200SE
2011 vintage.
AIXTRON AIX G5 HT是一種高性能、高通量的金屬-有機化學氣相沈積（MOCVD）反應器，用於制造先進材料和設備如半導體。反應堆采用高度精密的工藝，以確保各種材料正確暴露於等離子體和基質腔組件。重要應用領域AIXTRON AIX G5 HT能夠以經濟高效的方式生產各種材料。它因其在各種材料基板上的高選擇性而在業界廣為人知，從矽到高性能材料，如用於電子和光電子應用的砷化氙等。此外，高度可重復的生產過程和過程控制允許增加尺寸和結構控制，並使沈積薄膜在大面積上具有均勻性。G5 HT可編程工藝技術AIX G5 HT提供了一套工藝技術,這些技術是任何材料沈積成功的關鍵。可編程沈積源允許使用者使用各種反應性物質，而氣體供給系統則允許使用載流子氣體向反應室供應反應性物質。此外，高頻發電機電源可以產生完全定制的脈沖波形，以增加附著力，提高薄膜的均勻性。等離子體源和基板加熱AIX G5 HT中的高性能等離子體源和先進的基板加熱技術可實現精確的薄膜生產,更好地控制大面積薄膜的化學、結構和機械成分。G5 HT中的等離子體源功能強大，足以實現快速可靠的蝕刻沈積工藝，這是生產先進半導體器件的關鍵。安全和法規遵從性AIXTRON AIX G5 HT的設計完全符合相關安全法規,以確保操作人員的安全操作和最佳安全。此外，反應堆壓力過大，壓力過大，能夠迅速疏散有害物質和蒸氣。最後，AIXTRON AIX G5 HT是為了能效而設計的，它可以在半密封模式下運作，以保證較長的製程時間。
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