二手 AMAT / APPLIED MATERIALS Centura 5200 Epi #9034366 待售

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ID: 9034366
System, 8" (3) Selective Epi chambers RP Process: SEG (Selective Epitaxial Growth) Software version: B6.40 Wafer shape: SNNF (Semi Notch No Flat) Wafer cassette: 8" PEEK Miraial Wafer transfer: Robot: HP+ENP, Wafer centering: On the fly SMIF Interface: No System configuration: Chamber A; SEG Chamber B: SEG Chamber C: N/A Chamber D: N/A Chamber F: Single cool down Chamber A, B, and C: Manometer: MKS (1 Torr, 100 Torr, 1000 Torr) Clean type: HCI Clean RGA Port: Yes (connection port to the foreline) (2) Pyrometers (upper/lower): Iron: MR-T399-99C, K118 (AMAT: 0090-35052) Gas Pallet Configuration: Gas name: MFC size H2/N2 (H2 Main): H2: 100 L H2/N2 (H2 Slit): H2: 20 L HCl: HCl: 300 cc SiH4: SiH4: 1 L GeH4: H2: 500 cc Direct-Dopant 1: H2: 300 cc Mixed-Dopant: H2: 300 cc SiH2Cl2: SiH2Cl2: 1 L Direct-dopant 2: H2: 300 cc Gas Delivery: MFC: Type: Unit (C8100AF, C3101AF) Valves: Veriflo Rim pressure compressor: Pump CPRSR air with RSVR 1 MPA Filters: Pall Teflon filter Transducers: Measurement: MKS 852861PCH2GD, Display: MKS LDM-14793 Regulators: Veriflo Parker Coating: SUS316EP Single line drop (SLD): No System cabinet exhaust: Top and side (3) H2 Leak detector: Control Inst: SNT476-1000 ppm-H2 (AMAT: 0820-01021 (1)System controller: Remote AC Controller Transformer: N/A (480 V Direct connection) Chamber process kit: Quartz, carbon parts QTY | AMAT P/N | Parts Name (1) 0200-36727 SUSCEPTOR, 200MM EPI W/O CENTER TOSHIB (1) 0200-35081 RING, PREHEAT GRAPHITE BETA COATING (4) 0200-36642 PIN, 200MM EPI WAFER LIFT (LIFT+LINER LOCK PIN) (3) 0200-00207 TIP, SUSCEPTOR SHAFT OUTSIDE (1) 0200-35007 DOME, UPPER RP (1) 0200-35042 DOME, LOWER QTZ W/BALL (1) 0200-35162 LINER, CHMBR UPPER BRKT/CEN (25x) (1) 0200-35161 LINER, CHMBR LOWER BRKT/CEN (25x) (2) 0200-35916 INSERT, INJECT 3 ZONE QTZ (25x) (2) 0021-00571 INSERT,EXHAUST SST (1) 0200-35159 BAFFLE, INJECT 3 ZONE (25x) (1) 0200-00412 SHAFT, SUSCEPTOR W/RMVBL PINS NO CEN EPI (1) 0200-35424 LIFT, WAFER 8" POLY QUARTZ Foreline heater: Heater jacket from tool to pump 4", temp controller (not included in scope) Dry pumps: Stored inside of Helios Zenith (not included in scope) Load lock: iL70N New Look Transfer: iL70N New Look Chamber A: iH-35SE Chamber B: iH1000 Chamber C: iH1000 Gas abatement: (not included in scope) (1) Boc Edwards Helios Zenith (1) Kurita water circulation unit Full load current: 280 A Maximum system rating: 87 KVA Ampere rating of largest load: 100 A Interrupting current: 10,000 Amps I.C. 480 VAC, 3-Ph, 50/60 Hz, 4-Wires 2003 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Epi是一種現代半導體加工工具,用於將多晶材料薄層沈積到基板上。該反應堆適用於多種外延處理應用,如外延、應變層異質結構、高移動性緩沖層、位錯緩減和低缺陷器件層。AMAT Centura 5200 Epi利用大氣室和壓力控制設備誘導高溫原位外延生長。該反應堆為安全控制反應環境和工藝條件提供了高精度系統。其特點是采用低壓石英雙室設計,對基板進行逐區溫度控制。這確保了可重現和均勻的外延生長。APPLIED MATERIALS Centura 5200 Epi附有一個燃料輸送裝置,設計用於精確穩定地控制引入腔室的反應物氣體。它配備了集成的遙感質量流控制器,可不斷調整壓力,在一定壓力範圍內保持精確的氣流和組成。本機防止汙染物和雜質進入反應堆室。Centura 5200 Epi還包括一個互鎖的旁通閥和壓力監測工具。這消除了對資產進行頻繁維護的需要。此外,其先進的吹掃面板有兩級加熱模型。這提供了高效的板載塑化劑去除和顆粒控制設備。這樣可以提高工藝氣體穩定性和提高工藝均勻性。AMAT/APPLIED MATERIALS Centura 5200 Epi也被設計成具有強大的快速響應加熱和冷卻系統。此機制可確保從低至500 °C和高至700 °C的溫度中精確控制溫度。高溫控制器提供精確的溫度均勻性,以實現準確和可重復的工藝性能。AMAT Centura 5200 Epi是一款先進、精密的epi處理工具,旨在滿足各種現代半導體制造需求。它在各種各樣的epi處理應用中提供了均勻性和可靠性,使其成為現代半導體制造商的理想工具。
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