二手 AMAT / APPLIED MATERIALS Centura AP DPS II Polysilicon #9208337 待售
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ID: 9208337
晶圓大小: 12"
Polysilicon etcher, 12"
Wafer Size:
Diameter:
300 +/- 0.05mm
775 +/- 25um
Notch
Carrier: FOUP
With SEMI E47.1 (25 Wafers)
Water leak detector
Regulated N2 gas supply line
Corrosion resistant FI & SWLL
Heated SWLL
With ceramic diffusers
Transfer chamber: Accelerator
Loadlock isolation / Slit valve: AP Chemraz 513 elastomer
Atmospheric robot: KAWASAKI Single fixed robot with Edgegrip
(3) Loadports
Loadport type: Enhanced 25 wafer FOUP
(3) Light towers
EMO Type: Turn to release
System monitor:
Flat panel: Monitor 1
With keyboard on stand
Monitor cable lengths: 25ft With 16ft effective
IPUP Type: ALCATEL A100L / TOYOTA 0395-11103
Supporting remote units:
Etch common AC rack (DPS II): Cutler hammer blue AC rack
(19) Kits for AC rack
Chillers (DPS II): (2) H2000 & (4) SMC496
Coolant: DIEG / Galden
Chiller hose length: 75 Feet
Hardware configuration:
Process chamber: 1 - 4
DPS-II With AGN
Chamber hardware assy: MS411037-XA-BMA1A (24 Kit assemblies)
Endpoint type (Eye D IEP)
Plasma state monitor
ESC Type: ESC, ASSY, DPS2
Single ring:
Ceramic single ring
With (12) pockets
TMP SHIMADZU 3400l: TMP 3000 l/s, BOC EDWARDS
Upper chamber liner
Lower chamber liner
Inner SV door
Tunable gas nozzlez:
With ceramic weldment
RF Generator: 3 kW / 13.56 MHz, DPS2 1 Bottom
RF Generator: 1.5 kW / 13.56 MHz, DS2 2 Bottom
Bias match: DPS2
Source match: DPS2
O-ring kit for process express: KALREZ 8085
ESR80WN: EABARA
Gas box configuration:
Gas line 1: Cl2 100 sccm GF125
Gas line 2: HCl 200 sccm GF125
Gas line 3: HBr 600 sccm AE-PN780CBA
Gas line 4: SiF4 200 sccm GF125
Gas line 5: N2 200 sccm GF125
Gas line 6: O2 200 sccm GF125
Gas line 7: O2/He 50 sccm GF125
Gas line 8: SF6 200 sccm GF125
Gas line 9: SF6 50 sccm GF125
Gas line 10: CF4 200 sccm GF125
Gas line 11: CHF3 200 sccm GF125
Gas line 12: Ar 400 sccm GF125
Gas panel: Standard
Process kit configuration: Consumables
Gas weldment O-ring: 250 rf Hours
Swap parts
Missing parts:
Qty / Description / P/N
(1) / View window / 0200-36461
(1) / 10 torr Gauge / 135-00013
(1) / Ion gauge / 3310-0006
(1) / Bias match / 0190-03009
(1) / HV / 0090-00865
(1) / Foreline gauge / 1350-01232
(1) / Ion gauge ISO valve / 3870-00021
(1) / Monochrometer EPD / 0010-05478
(1) / Slit door irons / 0020-64587
(1) / Slit door bellow / 0040-76767
(1) / NA Heated weldment tee KF 40 warranty / 0190-23502
(1) / Heated weldment 7.09 KF 40 R warranty / 0190-23503
(1) / Ion gauge ISO valve / 3870-00021
(1) / Ion gauge / 3310-00006
(1) / Heated weldment 7.09 kf 40 r warranty / 0190-23503
(1) / Ion gauge ISO valve / 3870-00021
(1) / Ion gauge / 3310-00006
(1) / Bias match / 0190-03009
(1) / Foreline gauge / 1350-01232
(1) / HV / 0090-00865
(1) / MF Robot driver / 0190-17853
(3) / E84 Cables
(2) / Special gas pipes
Qty / Chamber / Description
(1) / CHA / Pressure switch 10 torr
(1) / CHB / Check valve
(1) / CHB / Pressure switch 10 torr
(1) / CHC / Pressure switch 10 torr
(1) / CHC / Check valve
(1) / CHC / View port window.
AMAT/APPLIED MATERIALS Centura AP DPS II多晶矽反應器是為半導體工業生產高純度多晶矽而設計的先進生產設備。這一復雜的系統利用三種不同的過程執行方式--氙等離子體摻雜（APD）、電荷浮動層（CFL）和矽植入（SI）--在生產的多晶矽中達到最佳純度。APD工藝采用了氙等離子體摻雜技術，將砷或磷摻雜劑引入多晶矽晶片表面，從而實現了電導率的變化和對材料電子性能的精確控制。CFL工藝利用浮動電荷層（FCL）調節摻雜劑運動，提供了摻雜劑選擇的靈活性，改進了工藝控制。最後，SI工藝利用離子註入工藝將獨特的基板表面引入多晶矽晶片，對其電性能進行精確控制，提高晶片質量。AMAT Centura AP DPS II多晶矽反應堆的設計使高速、多室的方法能夠生產多晶矽，允許每小時最多同時處理六個全尺寸。這使得它非常適合大規模的生產要求。利用其定制能力，用戶可以配置該單元以創建多種輸出規格，如生長載流子濃度、快速熱退火（RTA）和多晶矽沈積。這允許進一步加快處理時間。該機集成了六個關鍵部件：1）氣體輸送工具；2）真空資產；3）汙染控制模型；4）工藝室；（五）電子設備，（六）微層壓設備。氣體輸送系統確保以安全和有效的方式供應所有必要的氣體和摻雜劑。真空裝置可清除環境中的任何揮發性汙染物,並控制機器的壓力。汙染控制工具包括先進的清洗技術，用於凈化環境之前和之後的每個過程。加工室的設計目的是使物質保持在所需的溫度和壓力水平，並提供真正清潔的環境。電子設備監視和記錄所有資產操作,並提供各種模型控制功能。最後，微層合設備可以實現精確的材料沈積和控制。綜上所述，APPLIED MATERIALS Centura AP DPS II多晶矽反應器是半導體工業的先進生產系統。它利用了三種不同的過程執行方法--氙等離子體摻雜（APD）、電荷浮動層（CFL）和矽植入（SI），以達到所生產的多晶矽的最佳純度水平。該單元每小時最多可生產六個全尺寸晶片，並且可以針對各種晶片規格進行定制。該機器還與六個關鍵部件集成在一起,即氣體輸送工具、真空資產、汙染控制模型、工藝室、電子設備和微型層壓設備,以實現最高的質量和效率。
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