二手 AMAT / APPLIED MATERIALS Centura DPS II #9189888 待售

ID: 9189888
晶圓大小: 12"
優質的: 2006
Metal etcher, 12" Chamber configuration: (3) DPS II Axiom Chamber configuration: Chamber A: Chamber model: DPS II Bias generator: AE APEX 1513, 13.56 MHz, maximum 1500 W Bias match: AE 13.56 MHz,3 kV navigat Source generator: AE APEX 3013, 13.56 MHz, maximum 3000 W Source match: AE 13.56 MHz,6 kV navigat Lid: Ceramic lid, Single gas nozzle Turbo pump: STP-A2503PV Throttle valve: VAT Pendulum valve DN-250 ESC: Dual zone ceramic ESC Endpoint type: Monochromator Cathode chiller: SMC POU Wall chiller: SMC INR-496-016C Process kits coating: Anodize coating Cooling: HT 200 / FC 40 Chamber B: Cathode chiller: SMC POU Chamber C: Cathode chiller: SMC POU Wall chiller: SMC INR-496-016C Mainframe configuration: IPUP Type: ALCATEL A100L Gas panel type: NextGen VHP Robot: Dual blade MF PC Type: CPCI Factory interface configuration: Frontend PC type: 306 Server FIC PC type: 306 Server (3) Load ports Atmospheric robot: Yaskawa track robot Side storage: Right side MFC Configuration: Chamber A: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 ARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 SC-24 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 Chamber B: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 AARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 AARGD40W1 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 Chamber C: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 AARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 AARGD40W1 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 2006 vintage.
AMAT/APPLIED MATERIALS Centura DPS II是專為半導體器件制造而設計的高能、高通量等離子體蝕刻反應器。AMAT Centura DPS II的蝕刻速率是市場上可獲得的最高之一。此功能使制造商能夠縮短周期時間並提高生產吞吐量。反應堆還可以降低蝕刻過程中底物的溫度,從而有助於保持半導體器件的結構完整性。APPLICED MATERIALS CENTURA DPS+II采用AMAT高密度等離子體(HDP)技術,在整個基板表面提供卓越的均勻性和出色的蝕刻選擇性。這種對等離子體生成物種的優越控制也降低了底物上的缺陷密度。反應堆的HDP源具有低功率、脈沖電子源和多個感應耦合等離子體源以及集成氣體控制系統,在底物蝕刻過程中提供了很大的靈活性。Centura DPS II的最大基板尺寸為200 mmx200mm。它還提供可變壓力控制、真空排氣和可調工藝溫度,允許微調等離子體處理條件。此外,還可以對反應堆進行調整,以優化淺溝槽、窄細胞和其他需要低電離或激光蝕刻損傷的具有挑戰性的特征。閉環墨盒式平臺設計有助於保持工藝氣體的清潔,進一步幫助減少缺陷的形成。其大型PDLT電池和低離子室設計也使加工時間最小化,生產吞吐量最大化。最後,APPLIED MATERIALS一套過程監控和優化軟件有助於實現可靠和可重復的過程結果,滿足最嚴格的行業標準。
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