二手 AMAT / APPLIED MATERIALS Endura II Aluminum Interconnect #9392312 待售
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ID: 9392312
Physical Vapor Deposition (PVD) System, 12"
Process: Reflowsput
Chamber Position
C- Process type reactive PC
Process type SIP Ti: 1 And 5
Process type ALPS: 2
HT Al: 3 And 4
D - RT DSTTN
Process Type: Reactive PC
Chamber position: C
Chamber body:
Al
Part number: 0040-76718
Slit valve
Seal: Bonded
Door part number: 0040-84391
Bias Generator Frequency: 13.56 MHz and 2 MHz(In one generator)
RF:
Coil generator: COMDEL CDX-2000
Match box: 0010-21748 / 0010-52033
AMAT / APPLIED MATERIALS Part number : 0190-23308
Adaptor part/number: 0041-02659
Upper shield part/number: BELLJAR 0040-55456
Treatment (Arc spray / bead blast): AL2O3
Lower shield part/number: 0040-86514
Treatment (Arc spray / bead blast): Bead Blast
inner / mid shield part/number: 0021-19342
Shield clamp part/number: 0020-19258
Inner / mid shield clamp part/number: Insulator 0200-01903
Cryo gate valve (2/3 Pos): PENDULUM
MFC 1
Gas: He
Cal Factor: 1
Size: 300
Type: He
Part number: 0010-44160
MFC 2
Gas: Ar2
Cal Factor: 1
Size: 200
Type: Ar
Part number: 3030-13113
MFC 3
Gas: A
Cal Factor: 1
Size: 20
Type: Ar
Part number: 3030-13116
MFC 4
Gas: (MFC6) H2
Cal Factor: (MFC6) 1
Size: (MFC6) 100
Type: (MFC6) H2
Part number: (MFC6) 0015-02990
Chamber base pressure (T): 0.0000002
Chamber Rate of rise (nTorr / min): 15000
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
Optional Gas (He): 30.1
CDA: 95.7
Slit valve CDA: 85
Cooling water flow (GPM): 0.8
Process type: SIP Ti
Chamber position: 1,5
Shutter option
chamber body:
(Al or SST): SS
Part number: 0040-98657
Slit valve:
Seal: Bonded
Valve door part number: 0040-84391
Target:
Vendor: Nikko/Tosoh
Bakeout / idle power (%): 0.4
DC Power supply (AE-MDX): AE-Pinnacle
AMAT Part number Master: 0190-08122
AMAT Part number Slave: 0190-08122
Generator size : 20kw
DC (12 kwh, 24kwh): 40 kw
Bias generator : ENI - GHW12Z
AMAT Part number : 0190-25529
Bias Generator:
Size: 1.25KW
Frequency: 13.56 MHz
Rf Match Box: 0010-02372/0010-52034
Magnet:
Rotation speed (RPM): 65
Shim thickness: Ch1:1.25mm Ch5:1.0mm
Type: LP-3.7.4
Part number: 0010-11228
Target to magnet spacing (mm): 1.5 ± 0.6
Adaptor part number: 0040-82921
Kit spacer:
Upper part number: 0040-7694
Lower part number: 0040-62877
Upper shield part number: 0020-23549
Treatment:
(Arc spray/Bead Blast): Arc Spray
(Arc spray/Bead Blast): Bead Blast
Lower shield:
Part number: 0020-02344
Clamp part number: 0020-02348
Inner / mid shield:
Part number: 0020-54777
Clamp part number: 0020-08299
Dep ring part number: 0200-08301
Cover ring part number: 0021-17770
Insulator bushing part number: 0200-00590
Shutter: 0021-25014
Pedestal:
Type: SLT FDR E-CHUCK
Part number: 0010-22985
Heater spacing in steps: -55050
Maximum Cryo regen gas load (L): 400
Cryo gate valve (2/3 Pos): 3-Position
MFC 1:
Gas: N2
Size: 200
Type: N2
MFC 3:
Gas: Ar
Size: 50
Type: Ar
MFC 4:
Gas: ArH
Size: 20
Chamber base pressure (T): 2.0 e-8
Chamber Rate-of-Rise (nTorr / min): 522
Process supply pressure:
Ar 30psi
N2 30psi
Cryo regen N2 pressure: 90
Vent Ar pressure: 40
CDA: 88
Slit valve CDA: 82
Cooling water flow (GPM): 8.9
Vent Ar pressure: 47.7
Lower shield part number: 0021-22065
Upper shield part number: 0021-21234
Process type: (RT DSTTN)
Chamber position: D
Heater spacing:
55mm
Steps: -51000
Optional gas (He): 37.9
CDA: 95.7
Cooling water flow (GPM): 11.2.
AMAT/APPLIED MATERIALS Endura II鋁互連（AMAT）集成了專門為生產鋁基互連而設計的獨特設計。該反應堆用於先進半導體和光電器件的開發。它是有機場效應晶體管（OFET）和有機發光二極管（OLED）等技術的理想設備。AMAT Endura II鋁互連具有各向異性蝕刻工藝,可確保精確的互連。這是由於電感耦合等離子體源和低壓等離子體源的結合操作而實現的，這兩個源允許蝕刻具有垂直邊緣、低接觸電阻和金屬無過多損失的高長寬比金屬痕跡。ICP源與一個電阻、低壓、過濾過的Ar-Cl2（氙-氯）工藝室結合，具有集成的、計算機控制的動態溫度控制系統。這種組合提供了精密的鏈路處理，能夠產生高長寬比的特性，而不會有任何過度的金屬損失。它還配備了動態壓力控制（DPC）單元,可確保工藝條件得到優化,以實現更好的工藝控制,並提高互連設計的可重復性。這臺機器還具有現代化的圖形用戶界面，可以用來控制過程參數。它還可以導入和導出GDSII文件,允許將現有設計轉換為APPLIED MATERIALS互連格式。有了通過直觀的命令支持角層覆蓋和控制的能力，可以產生各種各樣的工藝晶片。APPLIED MATERIALS Endura II Aluminum Interconnect還具有濾過式技術,該技術能夠實現低溫互連,並提高平面性和較低的固有接觸電阻。這項功能由自動低溫聚合物噴射工具支持,用於通過互連過濾。最後,Endura II鋁互連（AMAT/APPLIED MATERIALS）為生產先進的鋁基互連提供了集成、精確、高生產率和低成本的解決方案。這一資產能夠產生垂直邊緣、接觸電阻低、金屬不會過度損失的高長寬比金屬跡線，使其成為下一代光電和半導體技術的理想選擇。
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