二手 AMAT / APPLIED MATERIALS Endura II #9195497 待售
看起來這件物品已經賣了。檢查下面的類似產品或與我們聯系,我們經驗豐富的團隊將為您找到它。
單擊可縮放
已售出
ID: 9195497
PVD System
(4) Chambers
Process type: HT DSTTN
Chamber position: 1,2
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO
Target number: TAG72
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size: 20 kW
Total DC (12 kWh,24 kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.0 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0020-29706
Treatment: Bead blast
Dep ring part number: 0200-01080
Cover ring part number: 0021-22177
Treatment: Bead blast
Shutter: 0021-25014
Treatment: Bead blast
Pedestal type: HT ECHUCK
Pedestal part number: 0010-27430
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
MFC 4 Gas: ArH
MFC 4 Size: 20
MFC 4 Type: Ar
Chamber base pressure (T): 3-E8
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Slit valve CDA: 85
Cooling water flow: 11.2 GPM
Process type: RT DSTTN
Chamber position: 3,4
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO / TOSOH
Target number: TAG 72
Bake out / Idle power: 0.4 %
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size : 20 kW
Total DC (12 kWh,24kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.1 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0021-22065
Dep ring part number: 0040-07291
Cover ring part number: 0021-22064
Shutter: 0021-26609
Pedestal type: Advanced A101
Pedestal part number: 0010-27432
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
Chamber base pressure: 3-E8 T
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Silt valve CDA: 85
Cooling water flow: 11.2 GPM.
AMAT/APPLIED MATERIALS/AKT Endura II是一種雙室氧化/蝕刻/CVD/ALD反應堆設備，用於先進的半導體應用和器件制造。它旨在提供高吞吐量和提高生產率。該系統采用兩室設計，能夠在不同的過程室中同時運行，從而實現更高的吞吐量和更好的均勻性。腔室具有獨立的溫度控制功能，最高工作溫度為1020 °C。AKT Endura II具有高密度等離子體（HDP）處理能力，在精密蝕刻、濺射沈積、化學氣相沈積（CVD）和原子層沈積（ALD）等領域提供優勢。其先進的HDP控制功能可實現更精確的蝕刻和濺射,以實現更精細的線條分辨率和納米特征更精細的沈積。此外，該單元支持多種等離子體來源，使廣泛的材料得以使用。AMAT Endura II還包括實時監控,以實現可靠的過程控制和更高的產量。用戶友好的圖形用戶界面（GUI）允許過程自動化,可根據需要在不同配方集之間快速切換。使用GUI可以調整先進薄膜結構和沈積工藝的配方,並能夠查看底物級參數,如溫度、壓力和晶圓均勻性。該機器還具有高級自動校正模塊（ACM）,它提供了一種優化過程結果的方法,用戶幹預較少。此模塊允許用戶即時監視和調整參數,以最小的停機時間確保改進的流程一致性和可重復性。此外,多種配方優化、智能晶圓處理和精確的過程控制等智能技術功能可提高產量和質量。由於其先進的特性和功能，APPLIED MATERIALS Endura II是先進半導體加工的理想選擇，允許用戶實現高生產吞吐量和提高設備質量。該工具提供卓越的性能、可靠性和靈活性,以提高產量和工藝一致性。
還沒有評論