二手 SCIENTIFIC ANALYSIS INSTRUMENTS / SAI MiniSIMS ToF #9062424 待售
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ID: 9062424
System
Mass Spectrometer: Time of Flight (ToF), compact reflectron geometry, secondary ion pulsing
Primary Beam: Ga+, current ~3 nA, energy ~5 to 7 keV
Expected Emitter lifetime > 200 emission μA hours
Pumping System: Turbomolecular + diaphragm pumps
Computer Hardware: Dedicated PC with (2) monitors
Positive and negative secondary ion detection
Secondary electron and secondary ion imaging
Defocused primary beam for static SIMS analysis
Dynamic SIMS capability
Charge neutralization for insulating samples
Integrated data processing software
Data System Windows XP or 7 compatible
Instrument control, spectrum and image acquisition and display
Additional Options:
(1) Spectral library with search facility
(2) Enhanced Sample Handling
10 cm (4”) samples or multiple samples with automated analysis
General:
Size: True benchtop, < 0.80 m2 footprint + PC
Supplies: Single phase mains electrical supply
Power Requirements: 1.2kVA without PC, approximately 2.3kVA with PC
Ambient Temperature: Between 15°C and 25°C
Sample Handling:
Sample Type: Vacuum-compatible solid, < 0.5 mm surface roughness
Sample Size: < 12.5 mm diameter x < 6.5 mm thickness for conducting samples and
< 9.5 mm diameter x < 5 mm thickness for insulating samples
Sample Loading Time:~5 minutes for standard sample stage
Optional Upgrade available: < 100 mm diameter and < 12 mm thickness or up to 31 standard samples
Loading time ~35 minutes
Performance:
Base Pressure: < 1 x 10-6 mbar
Mass Range: m/z = 1 to 1200 daltons
Mass Resolution: m/dm > 650 @ m/z = 27 daltons (FWHM)
Mass Accuracy: Better than 0.2% above m/z = 12 with internal spectrum calibration
100
Sensitivity I > 1 x 104 cps/nA, I = Σ (I(xMo+) + I( xMoO+))
Analysis Area:
Defocused beam:-
Fixed 2.7 +/- 0.3 mm diameter area
Focused beam:-
Minimum limited by primary beam (see spot size)
Maximum 4.5 mm x 4.5 mm image area for conducting samples
1.5 mm x 1.5 mm image area for insulating samples
Primary Beam Spot Size: < 10μm @ 3 nA / 6 keV Ga+ for conducting samples
< 50μm @ 3 nA / 6 keV Ga+ for insulating samples.
科學分析儀器/SAI MiniSIMS ToF是一種高性能光譜儀,設計用於測量和分析固體和有機樣品的組成。該儀器非常適合納米尺度分析、藥物發現、材料鑒定、化學成像等應用。SAI MiniSIMS ToF具有獨特的圓柱幾何形狀,可實現全樣本成像和分析功能。它由一系列將電離樣品束聚焦到軌道探測器上的透鏡組成。然後,該探測器將入射粒子記錄為時間函數。通過分析檢測到的分子作為時間的函數,SCIENTIFIC ANALYSIS MiniSIMS ToF能夠獲得對樣品的準確和詳細的化學分析。MiniSIMS ToF的電離過程是通過使用離子槍來實現的。這把槍是帶電粒子的外部來源,可以在正極或負極性模式下操作。離子槍用於選擇產生離子的粒子,並控制產生離子的能量。用這種離子槍可以測量超細水平的同位素組成。科學分析儀器/SAI MiniSIMS ToF有兩種不同的操作方法:初級和次級。在初級模式下,粒子被一束電子束轟擊,然後對產生的離子進行飛行時間(ToF)的測量。這用於獲取高分辨率分子圖像和精確的質量/電荷測量。在二次模式下,用慢二次離子質譜儀檢測不穩定同位素,以測量離子之間的同位素差異。總體而言,SAI MiniSIMS ToF高分辨率光譜儀為分析和成像應用提供了強大而可靠的儀器。它的高分辨率粒子探測器為各種分析技術提供了理想的性能。此外,它的離子槍允許產生具有不同能量和多重極性模式的離子。這使樣品中各種分子的鑒定和定量成為可能。憑借其多功能性、速度和準確性,這種儀器是任何實驗室的理想選擇。
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