ID: 293735898
晶圓大小: 8"
優質的: 2007
Sputtering system, 8"
Single-wafer load lock
(6) Process chambers
Heating chamber
Heating unit
Maximum substrate size : 360 mm
Substrate thickness: 2.0 mm
Sputtering thickness:
TiO2: 120 nm
T-SiO2: 7 nm
B-SiO2: 50 nm
2007 vintage.
