二手 VACUUM SYSTEMS TECHNOLOGY / VST TFSP-840 #293602592 待售
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ID: 293602592
Sputtering system
Ultimate vacuum pressure: 3x10^-7 Torr
Base pressure: 1x10^5 Torr
Pirani gauge, 100 to 1x10^-5 Torr
Maximum allowable leak rate: <1x10^-9 mbar L/sec (Helium)
Vacuum pumping system
PLC Controlled power switching boxes
DC Blocked filters
Substrate holder
PLC / PC Computer control
Targets:
Titanium Tungsten: (Ti) 10 (W) 90 %
Copper (Cu)
Silicon Nitride (Si3N4)
Sputtering mode:
DC / DC Pulsed
RF
Combination of RF and DC
Chamber:
High grade stainless steel, water cooled, SS 304L
3-Ports
RF Shielded view port, 4"
Pumping port
Load lock chamber:
Loading sample holder, Up to 6"
EDWARDS nXDS10 Dry pump:
Pressure: 8x10^-3 Torr
Nominal pumping speed: 10 m³/hrs
EDWARDS EXT75iDX Turbo molecular pump:
Pumping speed: 61 L/sec
Compression ratio N2: >1x10^11
Ultimate pressure: 5x10^-8 mbar
Nominal rotational speed: 90,000 rpm
Air cooling
Sputtering sources:
Source dimension: MAK, 4"
Mounting feedthrough: Quick coupler, 0.75"
Target specifications:
Target diameter: 4"
Target mounting: Magnetic
Magnetic materials
Magnet design:
Type: Nd/Fe B
Configuration: Balanced/Unbalanced
Operation specifications:
DC Max power: 3000W
RF Max power: 1200W
Cathode voltage (Volts): 200-1000V
Discharge current (Max amps): 7 amp
Cooling water:
Flow rate 1.0 gpm
Vacuum interlock
High voltage switch
Chamber switch
Load-lock switch
Dry air pressure switch
Water flow switches
Substrate temperature
Emergency stop
Electrical overload protection
Gas line:
Gas / MFC
Ar / 1-100 SCCM
N2 / 1-50 SCCM
O2 / 1 – 50 SCCM
Maximum beam current:
25 to 35% of discharge current
280mA (Ar @ 1A)
350mA (O2 @ 1A)
Beam energy (Mean): 50 to 180eV (~60% of Anode voltage set point)
Max discharge power: 300W (200W Continuous)
Discharge voltage range:
Ar: 50 to 300V
O2: 100 to 300V
Discharge current range: 0.2 to 1A (Mark I + Ion Source Controller)
Max operating pressure: 1 x 10^-3 Torr (0.13Pa)
Gas use: Inert Gases, O2, N2 and other reactive gases
Typical gas flow range: 2-20sccm
Ion beam neutralization: Filament cathode
Ion beam size (at opening): 1.1 in (28mm) Diameter
MFC 20 sccm
Power supply:
RF Power supply: 13.56 MHz, 600 W
DC Power supply: 1500 W.
VACUUM SYSTEMS TECHNOLOGY/VST TFSP-840是一種多功能濺射設備,可提供堅固一致的濺射性能。該系統配備了多種腔室配置,可容納多種工具和配件。該裝置能夠處理薄基板和柔性基板,以便在各種材料上進行可靠和可重復的沈積。VST TFSP-840采用最先進的兩室設計,帶有一個隔離的裝載室和一個單獨的加工室。裝載室的設計是為了減少顆粒汙染,並允許快速,容易樣品加載。每個腔室都配有2英寸的粗加工泵以營造穩定、低壓的環境,確保高效運行。裝載室采用鎖載門,最大限度地減少空氣中的汙染物,確保平穩運行。在工藝室內,VACUUM SYSTEMS TECHNOLOGY TFSP-840配備了八個陰極和一個動力基板旋轉機構。每個陰極可以獨立調整功率設置和濺射目標。高性能基板旋轉機構在整個基板上提供一致甚至均勻的沈積。頂部安裝的濺射槍使機器容易被容器化,用於大面積樣品的原位處理。該TSFSP-840配備了一系列附件,包括改裝的基板支架、外部基板加熱、滾筒運輸工具、板載升降機/直接檢修臂和安全鎖,以確保安全和不間斷的操作。新增的功能使TSFSP-840成為工業應用的理想選擇。由於其廣泛的特點,TFSFP-840提供了一致的和可重復的結果,確保了可靠的薄膜沈積在各種底物。該資產提供精確的過程控制和可靠的可重復性能,非常適合高吞吐量應用程序。而且,該型號人性化的觸摸屏界面允許簡單方便的操作。
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