二手 RIBER 49 #9383825 待售
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ID: 9383825
Molecular Beam Epitaxy (MBE) System
Growth chamber
Cryopanel
Platen manipulator
Motorized beam flux gauge
Inspection viewports and shutters
Bakeout assembly
Transfer gate valve
CT 10 Secondary pumping system
PF6 TITANIMUM Sublimation pumping system
Cold finger
Isolation gate valve
Secondary vacuum measurement system
Primary vacuum measurement system
Roughing system
Buffer chamber (Shuttle/Outgassing) equipment
Outgassing station: 400°C
Loading chamber equipment
Unloading chamber equipment
Residual gas analyzer, 1-200 amu
RHEED System, 12 KeV
Screen and shutter
Controller:
System control and network package
PC
FCA Parts
Sources:
(2) ABI 1000 Gallium effusion cells
ABI 1000 Indium effusion cell
(2) ABN 700 DF Aluminum effusion cells
VAC 6000 Arsenic valved cracker cell
(2) ABN 160 D Silicon dopant cells
ABN 160 D Beryllium dopant celll
KPC 1200 Phosphorus valved cracker cell
Phosphorus recovery assembly
(10) Source shutter assemblies
(6) CF200/CF150 Dismountable source cooling panels
CF200/CF150 Indium dismountable source cooling panel
(3) CF150/CF100 Dismountable source cooling panels
Accessories:
Pyrometer pneumatic
(5) Molybdenum platens, 3x4"
(5) Molybdenum platens, 5x3"
Molybdenum platen, 5x3" Plus, 2"
(5) Molybdenum platens, 6"
Ion pumping system
Cryopanel lifting beam
Adjustment tools for cell shutters
Modline 7 V Pyrometer
Non-contact Infrared thermometer
Gaskets
(2) Crucibles with spare kit for ABI 1000 cell (Ga)
(2) Inserts with spare kit for ABI 1000 cell (Ga)
Crucible for ABN 700 DF (Al).
分子束外延(MBE)是一種先進的薄膜生長技術,利用化學氣相沈積(CVD)或物理氣相沈積(PVD)在晶圓表面上產生薄膜。RIBER 49是一臺最先進的自動化MBE機器,旨在以經濟高效的方式增長薄膜。49采用反射幹擾增強(RIE)技術,在保持基板溫度穩定的同時,將沈積速率最小化。RIBER 49提供多源功能,包括兩個積液單元,一個射頻(RF)等離子體源和一個質量分析離子束源。通過使用49的多源能力,可以生長廣泛的化合物。RIBER 49還具有高達500 °C的基板加熱和用於生長過程的集成真空系統。49的屏蔽能確保最佳的環境和電氣安全,其真空室旨在消除空氣汙染並使樣品汙染保持在可接受的水平以下。RIBER 49還包括一個先進的實時過程監測系統,該系統提供實時反饋並能夠靈活調整沈積參數。49配備了觸摸屏界面,允許遠程訪問和數據分析,用於監控增長過程。RIBER 49在低基質溫度下提供出色的晶體生長,提供了廣泛晶體結構生長的可能性。多源能力和低操作溫度允許廣泛的材料如氧化物、氮化物和金屬沈積,形成具有受控界面特性的異質結構。49是一個通用的MBE系統,使研究人員能夠在各種底物上沈積性能最佳、均勻性高的薄膜。低底物溫度和多源相容性允許不同晶體結構的生長,讓研究人員深入了解納米結構的性質。RIBER 49還提供了實時監控過程的能力,允許快速的過程優化。因此,49為研究人員尋求材料和設備研究的最新進展提供了有力的解決方案。
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