二手 VEECO Gen II #9073487 待售
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ID: 9073487
晶圓大小: 3"
MBE Growth system, 3"
(10) ports for dopants
Process: Growth of arsenides and phosphides
Liquid nitrogen
Phase separator
AlGaAs Laser
Room temperature: 6°C - 10°C
Vacuum:
Growth chamber (GC)
Triode ion pump: 400 l/sec
Buffer chamber (BC)
Triode ion pump: 200 l/sec
(2) TSP Controllers
Loadlock chamber (LC)
(100) CTI Cryotor cryopumps
(2) Vacshorption pumps
Ventury pump
In situ and calibration tools:
RHEED System: 0-10 keV
RHEED Oscillation growth rate calibration system
Cells:
EPI
Valved cracker with valved controller
Cable
Riber three zone
P Valved cracker with valve controller
Power supply
(4) 400g Sumo cells Ga, In, Al
(2) Dopont cells
Dual electronic equipment rack, 19"
(12) Solenson DC power supplies
Riber P valved cracker
2704 Dual channel
Eurotherm controller
Substrate and heated station
(2) DC Power supplies
Substrate heater
Heated station
Other tools:
Ircon optical pyrometer
Growth chamber and beam flux
(2) GP Ion gauge controllers
Buffer and loadlock chamber
RHEED Power supply
RGA Power supply unit
TEK Scope
Riber P cracker power supply
Pyrometer port heated viewport
Substrate manipulator controller
Loadlock chamber
Lamp power and controller
AGILENT / HP / HEWLETT-PACKARD / KEYSIGHT Chart record mounted
RHEED Oscillation recording
Trolley for substrate handling.
VARIAN/VEECO GEN II是一種分子束外延(MBE)設備,用於生產薄膜和材料層,用於廣泛的應用。該系統由幾個組件組成,包括主室、生長室、積液室、泵和計算機控制的監視器。主室容納積液池,其中包含要蒸發的物質的來源。主室是真空密封的,薄膜生長發生在生長室內。積液池可加熱至高達1000 °C的溫度,使材料蒸發。室壁加熱以確保整個MBE生長室的溫度均勻。VEECO GEN II能夠生產厚度在3-200 nm範圍內的薄膜和層。該機組裝有三個積液電池,所有電池都連接到渦輪分子渦輪分子泵上。這使機器在主室內達到1.0x10-10 Torr的壓力,非常適合薄膜生長。電池還可以安裝一個外部擋板,以減少膜沈積過程中中性物質的通量。該工具除了具有生產薄膜和層的能力外,還包括計算機控制的顯示器。該監視器用於控制室內溫度和壓力,並監測生長過程。該資產還包括各種安全特性,如真空密封和用於監測腔室溫度的熱電偶。VARIAN GEN II是為廣泛應用生產薄膜和層的理想模型。該設備包括大型薄膜生長所需的功能,而系統的計算機控制監視器允許精確控制薄膜生長過程。該單元還設計為模塊化,允許用戶根據需要擴大或減少積液細胞的數量。憑借強大的設計和先進的功能,GEN II是薄膜研究者和開發者的絕佳選擇。
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