二手 VEECO Gen II #9107591 待售
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ID: 9107591
MBE System
Chamber with (8) source flange size, 2.75”
MBE Components:
RHEED System
Sample manipulator with flux monitor
QMS Head
Glove box
Pumps:
Cryo pump
Lon pump
Turbo pump
(2) Ion pumps:
Main chamber (600 l/m)
Buffer chamber (150 l/m) with (2) power supplies
(2) Ti-Sublimation pumps
With power supplies in the base of the main chamber
Manipulator, 2"
With servo motors for rotation
Position setting
Control unit
Heater power supply
Thermo-couple controller
Beam flux
Monitor and controller
(2) Ion gauges:
With (2) power supplies and controllers
Main chamber
Load lock
Load lock for 6 wafers
With heater for pre bake out with its power supply
Temperature controller
Electrical distribution panel
Bake out panels with electrical connections
Eight shutters with their control units
Utility distribution box for water, air, N2
QMS, Power supply & display unit
Operating system and computer
(6) Sample holders
Baffles head for main chamber turbo pump
Gaskets silver coated copper gaskets
Mixing manifold
With (2) leak valves and tubing for gas interceptor
Sulfur automatic valved cracker with:
(2) Temperature zones
100 CC Quartz crucible
(2) Power supplies
(2) Temperature controllers
Servo motor and controller and cable
Oxygen plasma source with:
RF Power supply
Matching unit
Leak valve
Water flow meter and filter
High temperature effusion cell with:
Temperature zone up to: 2000°C
10 CC Crucible
Power supply & temperature controller
Low temperature effusion cell with:
(2) Temperature zones (Base and tip)
25 CC PBN Crucible
(2) Power supplies
(2) Temperature controllers
Gas injector with:
Single heater
Power supply
Temperature controller and display
Mixed manifold with two leak valves and tubing
Options:
QCM Integrated
With machine for film thickness monitor
RHEED System
With 6" phosphorous screen and detector and camera
E-beam gun with power supply and control unit.
VARIAN/VEECO GEN II分子束外延(MBE)設備是一種高度先進的多用戶沈積系統,用於摻雜和沈積各種半導體材料。這種最先進的MBE裝置能夠精確控制沈積環境,從而實現高質量的層,具有極好的可重復性。這臺機器允許沈積高質量、均勻的半導體材料層,如砷化氙和砷化氘。沈積過程在真空室中進行,在真空室中,要沈積的基板放在加熱的支架上。凱撒制造的三種噴射細胞與工具一起使用;一個砷、一個移植物,以及一個移植物。這三個單元的組合使用戶可以靈活地創建復雜和特殊的薄膜結構。MBE資產的底壓維持在4-6 x 10-7 mbar,並采用單獨的負載鎖定模型進一步降低壓力,然後再插入真空室。此外,該設備還包含一個熱氧化裝置、一個臭氧發生器和兩條氮管線,以協助表面制備和生長增強。基板支架采用電加熱,用一系列熱電偶控制溫度,允許樣品所有區域溫度均勻,從而為薄膜沈積提供精確控制。預置溫度在200 K至1,000 K之間。此外,VEECO GEN II設備配備了最先進的軟件包,為控制源排放和沈積過程提供了多種有用的功能。該軟件包括一套用於模擬增長過程、定義層結構和執行各種參數計算的綜合工具。使用強大的參數化優化功能,用戶還可以開發其薄膜結構的詳細模擬,使他們能夠最大限度地提高樣品的性能。它還允許用戶創建圖形用戶界面,以便為他們提供設置和監控實驗的便捷方式。VARIAN GEN II MBE系統的設計滿足了廣泛的科學和工業要求,使用戶能夠將其研究應用提升到一個新的水平。這個先進的單元能夠產生高質量的結果,並提供了靈活分配不同的材料,原子按原子,以便創建復雜的薄膜結構。
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