二手 VEECO Gen II #9194612 待售
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ID: 9194612
晶圓大小: 3"
MBE Growth system, 3"
AlGaAs Laser
InGaAsP
Vacuum:
Growth chamber (GC)
Triode ion pump: 400 l/sec
Buffer chamber (BC)
Triode ion pump: 200 l/sec
(2) TSP Controllers
Loadlock chamber (LC)
(100) CTI Cryotor cryopumps
(2) Vacshorption pumps
Ventury pump
In situ and calibration tools:
RHEED System: 0-10 keV
RHEED Oscillation growth rate calibration system
Cells:
EPI
Valved cracker with valved controller
Cable
Riber three zone
P Valved cracker with valve controller
Power supply
(3) 400g Sumo cells Ga, In, Al
(2) Dopont cells
Dual electronic equipment rack, 19"
(12) Solenson DC power supplies
2704 Dual channel
Eurotherm controller
Substrate and heated station
(2) DC Power supplies
Substrate heater
Heated station
Other tools:
Ircon optical pyrometer
Growth chamber and beam flux
(2) GP Ion gauge controllers
Buffer and loadlock chamber
RHEED Power supply
RGA Power supply unit
TEK Scope
Riber P valved cracker valve controller
Riber P cracker power supply
Pyrometer port heated
Substrate manipulator controller
Loadlock chamber
Lamp power and controller
AGILENT / HP / HEWLETT-PACKARD / KEYSIGHT Chart record mounted
RHEED Oscillation recording
Trolley for substrate handling.
VARIAN/VEECO GEN II分子束外延(MBE)設備是用於高質量半導體材料研發的突破性技術。它為這些設備的生產提供了卓越的控制水平、精度和準確性,以確保最佳性能和可靠性。該系統包括用於材料摻雜、沈積和結構生長的VEECO GEN II MBE處理器。該處理器旨在實現超高真空環境,並運行各種基板和源配置。該單元還包括可選的AE VEECO長體源,它提供高功率和出色的分子束均勻性,允許精確精確的MBE結果。包括以下mainunit組件:1.真空室-主室設計用於在超高真空環境下工作,使材料層的沈積和生長具有極好的均勻性和霧化性。2.底物來源-根據所需的材料和標準(結晶/無定形等),有若幹來源。為了提高準確性,可以使用可選的參考和目標源來優化增長級別。3.源配置-源配置包括離子源、電子束源、反應源和嵌入源,以適應各種MBE過程。4.工藝控制-可變速率工藝控制允許對基板沈積或生長速率進行精確調整。可選的Autotune模塊可用於改進過程控制以及提高生產效率和節省成本。5.樣品對齊-樣品對齊機為晶片及其層提供精確和可重復的定位,以實現最佳的均勻性和準確性。6.真空監測-該工具使用原位濕度計和沈積計、分析儀和測量儀監測壓力、溫度和殘留氣體的水平。VARIAN GEN II MBE資產提供用戶友好的設計和直觀的控制,以實現快速的設置和操作。該型號還提供各種配置,具體取決於具體要求。通過利用最新的MBE技術,該設備能夠提供最佳的精度和精確度,以實現卓越的質量和可靠性。
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