二手 ULTRATECH 1500 #9190984 待售

Stepper, 3"-8" Round wafers Stage type: X, Y, & theta, air bearing, laser metered Vibration control: Isolated granite table Computer / Printer type: HEWLETT-PACKARD 362 Controller, graphics monitor / Enclosed impact printer, cleanroom paper, cart based Wafer handling: Cassette-to-cassette autoloader, SEMI standard Imaging & lens: Feature size: 1.0 μm, Over full field DOF (1 μm resist): 3.0 μm (± 1.5 μm), ± 10% CD control over full field area simultaneously Wafer leveling: Site-by-site / Global Lens distortion: 160 nm, 100%, Maximum X / Y Vector Reference lens matching: 180 nm, 100% Maximum X / Y Vector matched to reference lens Max image area: 34.2 x 13.6 mm, 465.1 mm² Largest square: 18.0 x 18.0 mm, 324.0 mm² Longest rectangle: 39.0 x 11.4 mm, 444.6 mm² Exposure spectrum: 390-450 nm Broadband, includes g- & H-lines Illumination: Exposure uniformity: ± 3.0%, Includes uniformity & repeatability Wafer plane intensity: >= 1000 mW/cm² Lamp type: 200 Watt, pulsed to 500 watts during exposure, Hg arc lamp Alignment & alignment system: Site-by-site alignment: ± 150 nm, 100% Alignment target size (WAS): 180 μm cross which requires 200 μm horizontal scribe, two required per field Alignment spectrum (WAS): 500-650 nm Broadband General specifications: Wafer size / Steps per wafer / Throughput (WPH): 75 / 9 / 105 100 / 16 / 95 125 / 24 / 75 150 / 35 / 55 200 / 61 / 30 Wafer size in mm, >= 90% wafer coverage, exposure dose of 100 mJ/cm² Reticle load & align time: <= 90 seconds, 3 x 5 x 0.090 inch reticle Field change time: <= 10 seconds Reticle: Substrate type: 3 x 5 x 0.090 inch QUARTZ, 5 x 5 x 0.090 inch option Chrome type: Anti reflective Pellicle standoff: 1.5 mm, All fields in usable row protected Fields per reticle row: 2-5 Affects max X field dimension UV lamp: 200W (Hg) Alignment accuracy: +/- 0.18μm Substrates: 150mm and 100mm with adapted substrate holder Laser need repair 1994 vintage.